1xnm DRAM Challenges

By Mark LaPedus - 18 Feb, 2016 - Comments: 3

At a recent event, Samsung presented a paper that described how the company plans to extend today’s planar DRAMs down to 20nm and beyond. This is an amazing feat. Until very recently, most engineers believed DRAMs would stop scaling at 20nm or so. Instead, Samsung is ramping up the world’s most advanced DRAMs—a line of 20nm parts—with plans to go even further. Micron and SK Hynix soo... » read more

ALD Market Heats Up

By Mark LaPedus - 17 Sep, 2015 - Comments: 1

Amid the shift to 3D NAND, finFETs and other device architectures, the atomic layer deposition (ALD) market is heating up on several fronts. Applied Materials, for example, recently moved to shakeup the landscape by rolling out a new, high-throughput ALD tool. Generally, [getkc id="250" kc_name="ALD"] is a process that deposits materials layer-by-layer at the atomic level, enabling thin and ... » read more

The Power Of eDRAM

By Barry Pangrle - 16 Jun, 2014 - Comments: 1

In last month’s article we looked at different aspects of technology nodes and the multiple techniques that are used to keep scaling on its path of increasing density. From an energy standpoint, it’s expensive to move data around and with the high bandwidth that’s needed to keep processors “fed,” engineers are looking at ways to keep data closer to the processing logic and minimize th... » read more

Big Memory Shift Ahead

By Brian Bailey - 22 May, 2014 - Comments: 1

System architecture has been driven by the performance of [getkc id="22" kc_name="memory"]. Processor designers would have liked all of the memory be fast [getkc id="92" kc_name="SRAM"], placed on-chip for maximum performance, but that was not an option. Memory had to be fabricated as separate chips and connected via a Printed Circuit Board (PCB). That limited the number of available I/O ports ... » read more

Knowledge Centers
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tag: metal-insulator-metal

1xnm DRAM Challenges

ALD Market Heats Up

The Power Of eDRAM

Big Memory Shift Ahead