Key Takeaways:
Mask costs are not stopping leading-edge scaling, but they increasingly influence design, node, and process choices.
High-NA EUV will tighten requirements for CD, EPE, local CDU, mask 3D modeling, stitching, and materials.
Reduced depth of focus in High-NA EUV will drive new resist, etch, film, and absorber approaches.
Experts at the table: Semiconductor Engin...
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