tag: Micron

What’s Next in 3D NAND?
By Mark LaPedus - 18 Jan, 2018 - Comments: 1

In 2018, the industry needs to keep a close eye on 3D NAND as the vendor base is in the midst of some major changes. The changes involve several partnerships, including the Toshiba/Western Digital and Intel/Micron duos. It also impacts the other 3D NAND players, namely Samsung and SK Hynix. But first, demand for NAND flash memory remains robust due to the onslaught of data in systems. ... » read more

The Week In Review: Manufacturing
By Mark LaPedus - 12 Jan, 2018 - Comments: 0

Chipmakers Intel and Micron have ended their long-running NAND joint development partnership. The companies will continue to develop NAND, but they will work independently on future generations of 3D NAND. The companies have agreed to complete the development of their third-generation of 3D NAND technology, which will be delivered towards the end of 2018. That is expected to be a 96-layer ... » read more

A New Memory Contender?
By Mark LaPedus - 02 Jan, 2018 - Comments: 1

Momentum is building for a new class of ferroelectric memories that could alter the next-generation memory landscape. Generally, ferroelectrics are associated with a memory type called ferroelectric RAMs (FRAMs). Rolled out by several vendors in the late 1990s, FRAMs are low-power, nonvolatile devices, but they are also limited to niche applications and unable to scale beyond 130nm. While... » read more

The Week In Review: Manufacturing
By Mark LaPedus - 22 Dec, 2017 - Comments: 0

Chipmakers, LCD suppliers United Microelectronics Corp. (UMC) has announced the availability of the company’s 40nm process platform that incorporates Silicon Storage Technology’s (SST) embedded SuperFlash non-volatile memory. The 40nm SST process features a >20% reduction in eFlash cell size and 20-30% macro area over UMC’s 55nm SST technology. Toshiba Electronic Devices & Storage has s... » read more

Pushing DRAM’s Limits
By Kevin Fogarty - 14 Dec, 2017 - Comments: 1

If humans ever do create a genuinely self-aware artificial intelligence, it may well exhibit the frustration of waiting for data arrive. The access bandwidth of DRAM-based computer memory has improved by a factor of 20x over the past two decades. Capacity increased 128x during the same period. But latency improved only 1.3x, according to Kevin Chang, a researcher at Carnegie Mellon Universit... » read more

China’s Ambitious Automotive Plans
By Ed Sperling - 08 Nov, 2017 - Comments: 1

China has big plans for cars—and other related markets. After years of trailing behind Japanese, European and U.S.-based carmakers in automotive technology, reliability, status, and even market share within its own political borders, the country is making a concerted push into internally developed and manufactured assisted- and self-driving vehicles. The strategy plays out well for China o... » read more

The Week In Review: Manufacturing
By Mark LaPedus - 27 Oct, 2017 - Comments: 0

Chipmakers At this week’s International Wafer-Level Packaging Conference (IWLPC), Samsung disclosed details about its efforts in the panel-level fan-out market. Samsung as well as ASE, Nepes and others are developing a next-generation fan-out technology using a panel-level format. In panel-level fan-out packaging, you can put more die on a panel as compared to a traditional round wafer, w... » read more

Memory Test Challenges, Opportunities
By Jeff Dorsch - 18 Oct, 2017 - Comments: 0

The semiconductor capital equipment market is on fire, and the memory chip test equipment sector is no different. But it is getting much more difficult on the memory side. Memory test vendors are contending with next-generation devices, such as 3D NAND flash memories, HBM2 chips, low-power double-data-rate DRAMs, graphics DRAMs, phase-change memories, magnetoresistive RAMs, and resistive RAM... » read more

Data Centers Turn To New Memories
By Ann Mutschler - 12 Oct, 2017 - Comments: 3

DRAM extensions and alternatives are starting to show up inside of data centers as the volume of data being processed, stored and accessed continues to skyrocket. This is having a big impact on the architecture of data centers, where the goal now is to move processing much closer to the data and to reduce latency everywhere. Memory has always been a key piece of the Von Neumann compute archi... » read more

The Week In Review: Manufacturing
By Mark LaPedus - 29 Sep, 2017 - Comments: 0

Chipmakers Who will buy Toshiba’s memory business? In the latest of what is becoming a confusing saga, Toshiba has signed a deal to sell its memory unit to a group led by Bain Capital. The Bain-led consortium will hold a 49.9% stake in the memory unit, while Toshiba will hold 40.2% and Japan’s Hoya will own 9.9%. Other members in the group include Apple, Dell, Kingston, and Seagate. In add... » read more

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