Ferroelectric HEMT Reconfigurable Transistor (U. of Michigan)

By Technical Paper Link - 10 Mar, 2023 - Comments: 0

A new technical paper titled "Fully epitaxial, monolithic ScAlN/AlGaN/GaN ferroelectric HEMT" was published by researchers at University of Michigan. “We can make our ferroelectric HEMT reconfigurable,” That means it can function as several devices, such as one amplifier working as several amplifiers that we can dynamically control. This allows us to reduce the circuit area and lower the... » read more

Nanoscale (5nm) Ferroelectric Semiconductor (University of Michigan)

By Technical Paper Link - 08 Feb, 2023 - Comments: 0

A new technical paper titled "Thickness scaling down to 5 nm of ferroelectric ScAlN on CMOS compatible molybdenum grown by molecular beam epitaxy" was published by researchers at University of Michigan, with DARPA funding. "Ferroelectric semiconductors stand out from others because they can sustain an electrical polarization, like the electric version of magnetism. But unlike a fridge magn... » read more

Making BaZrS3 Chalcogenide Perovskite Thin Films by Molecular Beam Epitaxy

By Technical Paper Link - 13 Nov, 2021 - Comments: 0

Abstract: We demonstrate the making of BaZrS3 thin films by molecular beam epitaxy (MBE). BaZrS3 forms in the orthorhombic distorted-perovskite structure with corner-sharing ZrS6 octahedra. The single-step MBE process results in films smooth on the atomic scale, with near-perfect BaZrS3 stoichiometry and an atomically-sharp interface with the LaAlO3 substrate. The films grow epitaxially via tw... » read more

RF GaN Gains Steam

By Mark LaPedus - 25 Jul, 2016 - Comments: 0

The RF [getkc id="217" kc_name="gallium nitride"] (GaN) device market is heating up amid the need for more performance with better power densities in a range of systems, such as infrastructure equipment, missile defense and radar. On one front, for example, RF GaN is beginning to displace a silicon-based technology for the power amplifier sockets in today’s wireless base stations. GaN is m... » read more

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tag: molecular beam epitaxy

Ferroelectric HEMT Reconfigurable Transistor (U. of Michigan)

Nanoscale (5nm) Ferroelectric Semiconductor (University of Michigan)

Making BaZrS3 Chalcogenide Perovskite Thin Films by Molecular Beam Epitaxy

RF GaN Gains Steam

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tag: molecular beam epitaxy

Ferroelectric HEMT Reconfigurable Transistor (U. of Michigan)

Nanoscale (5nm) Ferroelectric Semiconductor (University of Michigan)

Making BaZrS3 Chalcogenide Perovskite Thin Films by Molecular Beam Epitaxy

RF GaN Gains Steam

Trending Articles

Shift Left Is The Tip Of The Iceberg

Hybrid Bonding Makes Strides Toward Manufacturability

Americas Chip Funding Energizes Industry

Advanced Packaging Driving New Collaboration Across Supply Chain

Chiplets Make Progress Using Interconnects As Glue

Knowledge Centers Entities, people and technologies explored

Related Articles

Shift Left Is The Tip Of The Iceberg

Partitioning In The Chiplet Era

3.5D: The Great Compromise

AI’s Role In Chip Design Widens, Drawing In New Startups

Key Technologies To Extend EUV To 14 Angstroms

Memory Fundamentals For Engineers

What Comes After HBM For Chiplets

Why Small Fab And Assembly Houses Are Thriving

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