tag: molybdenum disulfide

Research Bits: June 8
By Jesse Allen - 08 Jun, 2026 - Comments: 0

Multi-tasking transistor Researchers at Pohang University of Science & Technology (POSTECH) developed a zinc oxide (ZnO) and tellurium (Te) heterojunction transistor technology that exhibits negative differential transconductance (NDT), where current decreases over a certain voltage range. By precisely controlling overlap length between the two materials, the team realized double negati... » read more

A Deionized Water-Based Large-Scale Transfer Process For 2D Materials Grown on Sapphire (AMO, RWTH, Aixtron)
By Technical Paper Link - 18 May, 2026 - Comments: 0

A new technical paper, "Water-based, large-scale transfer of 2D materials grown on sapphire substrates," was published by researchers at AMO GmbH, RWTH Aachen University, and AIXTRON SE. Abstract "Two-dimensional materials (2DMs) hold significant potential for future electronics, as demonstrated by high-performing devices for sensing, optics, and electronics. However, scalable growth tech... » read more

Nanoscale MoS₂-based Memristors Integrated into CMOS Microchips
By Technical Paper Link - 20 Feb, 2026 - Comments: 0

A new technical paper, "Integration of Low-Voltage Nanoscale MoS2 Memristors on CMOS Microchips" was published by RWTH Aachen and Forschungszentrum Jülich GmbH. Abstract "2D materials (2DMs) are gaining increased attention for applications such as advanced electronics and neuromorphic computing due to their excellent electrical properties. Among these 2DMs, molybdenum disulfide (MoS2) ha... » read more

MoS2 Memristors With Fast Switching Speed and Low Power Consumption (AMO, RWTH Aachen et al.)
By Technical Paper Link - 31 Dec, 2025 - Comments: 0

A new technical paper titled "Intermediate Resistive State in Wafer-Scale Vertical MoS2 Memristors Through Lateral Silver Filament Growth for Artificial Synapse Applications" was published by researchers at AMO GmbH, RWTH Aachen, Forschungszentrum Jülich, Peter Grünberg Institute, Eindhoven University of Technology et al. Abstract "Memristors based on 2D materials have garnered signifi... » read more

Research Bits: Oct. 21
By Jesse Allen - 21 Oct, 2025 - Comments: 0

Direct patterning with UV cross-linking Researchers from Ulsan National Institute of Science and Technology (UNIST), Yonsei University, Sungkyunkwan University, University of Chemistry and Technology Prague, and Sogang University developed a technique that enables the direct patterning of 2D semiconductor materials onto substrates without the use of toxic solvents. The process involves disp... » read more

Research Bits: July 1
By Jesse Allen - 01 Jul, 2025 - Comments: 0

Copper-to-copper bonding for GaN integration Researchers from MIT, Georgia Tech, and Air Force Research Laboratory propose a bonding process to integrate gallium nitride (GaN) transistors onto standard silicon CMOS chips. They used the process to create a power amplifier. “We wanted to combine the functionality of GaN with the power of digital chips made of silicon, but without having to ... » read more

Research Bits: Apr. 7
By Jesse Allen - 07 Apr, 2025 - Comments: 0

DNA scaffolds for 3D electronics Researchers from Columbia University, Brookhaven National Laboratory, and University of Minnesota used DNA to help create self-assembled 3D electronic devices with nanometer-size features. The team deposited arrays of gold squares on a surface, onto which they could attach short pieces of DNA. These served as anchors to which they could fasten eight-sided di... » read more

Research Bits: July 22
By Jesse Allen - 22 Jul, 2024 - Comments: 0

Sub-1nm gate Researchers from Korea's Institute for Basic Science, Sungkyunkwan University, Harvard University, and Korea Advanced Institute of Science and Technology (KAIST) found a method that enables epitaxial growth of 1D metallic materials with a width of less than 1 nm, which they used as a gate electrode of a miniaturized transistor. The team controlled the crystal structure of molyb... » read more

Research Bits: November 21
By Jesse Allen - 21 Nov, 2023 - Comments: 0

MoS2 in-memory processor Researchers from École Polytechnique Fédérale de Lausanne (EPFL) developed a large-scale in-memory processor using the 2D semiconductor material, molybdenum disulfide (MoS2), for the channel material in the more than 1,000 transistors that comprise the processor. The MoS2-based in-memory processor is dedicated to vector-matrix multiplication, key for digital signal ... » read more

A New Layered Structure With 2D Material That Exhibits A Unique Transfer Of Energy And Charge
By Technical Paper Link - 06 Sep, 2023 - Comments: 0

A technical paper titled “Excitation-Dependent High-Lying Excitonic Exchange via Interlayer Energy Transfer from Lower-to-Higher Bandgap 2D Material” was published by researchers at University of Warsaw, Brookhaven National Laboratory, and National Institute for Materials Science (Japan). Abstract: "High light absorption (∼15%) and strong photoluminescence (PL) emission in monolayer (1L... » read more

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