Research Bits: November 21


MoS2 in-memory processor Researchers from École Polytechnique Fédérale de Lausanne (EPFL) developed a large-scale in-memory processor using the 2D semiconductor material, molybdenum disulfide (MoS2), for the channel material in the more than 1,000 transistors that comprise the processor. The MoS2-based in-memory processor is dedicated to vector-matrix multiplication, key for digital signal ... » read more

A New Layered Structure With 2D Material That Exhibits A Unique Transfer Of Energy And Charge


A technical paper titled “Excitation-Dependent High-Lying Excitonic Exchange via Interlayer Energy Transfer from Lower-to-Higher Bandgap 2D Material” was published by researchers at University of Warsaw, Brookhaven National Laboratory, and National Institute for Materials Science (Japan). Abstract: "High light absorption (∼15%) and strong photoluminescence (PL) emission in monolayer (1L... » read more

How To Fine-Tune Large-Area Molybdenum Disulfide Atomic Layer Deposition At 150°C


A technical paper titled "Toolbox of Advanced Atomic Layer Deposition Processes for Tailoring Large-Area MoS2 Thin Films at 150 °C" was published by researchers at Eindhoven University of Technology, University of Michigan, and University College Cork. Abstract: "Two-dimensional MoS2 is a promising material for applications, including electronics and electrocatalysis. However, scalable meth... » read more

Research Bits: May 10


Growing 2D TMDs on chips Researchers from Massachusetts Institute of Technology (MIT), Oak Ridge National Laboratory, and Ericsson Research found a way to “grow” layers of 2D transition metal dichalcogenide (TMD) materials directly on top of a fully fabricated silicon chip, a technique they say could enable denser integrations. The researchers focused on molybdenum disulfide, which is f... » read more

Power/Performance Bits: Dec. 7


Logic-in-memory with MoS2 Engineers at École Polytechnique Fédérale de Lausanne (EPFL) built a logic-in-memory device using molybdenum disulfide (MoS2) as the channel material. MoS2 is a three-atom-thick 2D material and excellent semiconductor. The new chip is based on floating-gate field-effect transistors (FGFETs) that can hold electric charges for long periods. MoS2 is particularly se... » read more

Power/Performance Bits: March 9


Healing perovskites Researchers at Brown University found that while perovskite solar cells can crack easily, they are also capable of healing those cracks. "The efficiency of perovskite solar cells has grown very quickly and now rivals silicon in laboratory cells," said Nitin Padture, a professor in Brown's School of Engineering and director of Brown's Institute for Molecular and Nanoscale... » read more

Power/Performance Bits: Dec. 12


Sunny days slow 5G 5G networks promise a world of fast wireless data speeds and connected everything.  However, researchers at Embry-Riddle Aeronautical University and King Saud University found that hot, sunny weather could degrade 5G cellular transmissions by more than 15%. The researchers focused on how solar radio emissions would affect the unlicensed 60 GHz bands, part of the millimet... » read more

Exploring New Scaling Approaches


At the recent SPIE Photomask Technology + Extreme Ultraviolet Lithography 2017 conference, Semiconductor Engineering sat down to discuss semiconductor technology with Tsu-Jae King Liu, the TSMC Distinguished Professor in Microelectronics in the Department of Electrical Engineering and Computer Sciences at the University of California at Berkeley. More specifically, Liu discussed some of the new... » read more

Power/Performance Bits: July 18


Ad hoc "cache hierarchies" Researchers at MIT and Carnegie Mellon University designed a system that reallocates cache access on the fly, to create new "cache hierarchies" tailored to the needs of particular programs. Dubbed Jenga, the system distinguishes between the physical locations of the separate memory banks that make up the shared cache. For each core, Jenga knows how long it would t... » read more

Power/Performance Bits: July 12


Thin transistors Scientists with the U.S. Department of Energy's Lawrence Berkeley National Laboratory developed a way to chemically assemble transistors and circuits that are only a few atoms thick. The team controlled the synthesis of a transistor in which narrow channels were etched onto conducting graphene, with molybdenum disulfide (MoS2) seeded in the blank channels. Both of these m... » read more

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