Power/Performance Bits: April 19


Ferroelectric non-volatile memory Scientists from the Moscow Institute of Physics and Technology (MIPT), the University of Nebraska, and the University of Lausanne in Switzerland succeeded in growing ultra-thin (2.5-nanometer) ferroelectric films based on hafnium oxide that could potentially be used to develop non-volatile memory elements called ferroelectric tunnel junctions. The film was g... » read more

Power/Performance Bits: March 22


Superconducting memory A group of scientists from the Moscow Institute of Physics and Technology and the Moscow State University developed a fundamentally new type of memory cell based on superconductors, which they believe will be able to work hundreds of times faster than memory devices commonly used today. The basic memory cells are based on quantum effects in "sandwiches" of supercond... » read more

Manufacturing Bits: Jan. 19


Bubble-pen lithography The University of Texas at Austin has developed a new nano-patterning technology--bubble-pen lithography. Researchers have devised a bubble-pen that enables optically-controlled microbubbles. The bubbles are used to pattern structures onto a surface at tiny dimensions. Bubble-pen lithography could be used in microelectronics, nanophotonics, and nanomedicine. In si... » read more

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