tag: NVM

What’s In A Name(space)? Optimizing SSD Controller Performance And Verification
By Himani Kaushik - 12 May, 2022 - Comments: 0

Solid state drives (SSDs) have come to the forefront as a promising solution for today and tomorrow’s immense data transfer and storage demands. And SSDs themselves are constantly evolving with upgrades of their critical components to provide higher access speeds. One such component for the NVMe specification is created by the division of non-volatile memory (NVM) into what are commonly known... » read more

Memory Bandwidth Regulation on Hybrid NVM/DRAM Platforms
By Technical Paper Link - 20 Apr, 2022 - Comments: 0

New technical paper from Shanghai Jiao Tong University Abstract "Non-volatile memory (NVM) has emerged as a new memory media, resulting in a hybrid NVM/DRAM configuration in typical servers. Memory-intensive applications competing for the scant memory bandwidth can yield degraded performance. Identifying the noisy neighbors and regulating the memory bandwidth usage of them can alleviate th... » read more

SOT-MRAM To Challenge SRAM
By Bryon Moyer - 13 Jan, 2022 - Comments: 1

In an era of new non-volatile memory (NVM) technologies, yet another variation is poised to join the competition — a new version of MRAM called spin-orbit torque, or SOT-MRAM. What makes this one particularly interesting is the possibility that someday it could supplant SRAM arrays in systems-on-chip (SoCs) and other integrated circuits. The key advantages of SOT-MRAM technology are the pr... » read more

Toward Software-Equivalent Accuracy on Transformer-Based Deep Neural Networks With Analog Memory Devices
By Technical Paper Link - 20 Dec, 2021 - Comments: 0

Abstract:  "Recent advances in deep learning have been driven by ever-increasing model sizes, with networks growing to millions or even billions of parameters. Such enormous models call for fast and energy-efficient hardware accelerators. We study the potential of Analog AI accelerators based on Non-Volatile Memory, in particular Phase Change Memory (PCM), for software-equivalent accurate i... » read more

All-inorganic perovskite quantum dot light-emitting memories
By Technical Paper Link - 18 Nov, 2021 - Comments: 0

Abstract "Field-induced ionic motions in all-inorganic CsPbBr3 perovskite quantum dots (QDs) strongly dictate not only their electro-optical characteristics but also the ultimate optoelectronic device performance. Here, we show that the functionality of a single Ag/CsPbBr3/ITO device can be actively switched on a sub-millisecond scale from a resistive random-access memory (RRAM) to a light-e... » read more

More Errors, More Correction in Memories
By Bryon Moyer - 09 Nov, 2021 - Comments: 1

As memory bit cells of any type become smaller, bit error rates increase due to lower margins and process variation. This can be dealt with using error correction to account for and correct bit errors, but as more sophisticated error-correction codes (ECC) are used, it requires more silicon area, which in turn drives up the cost. Given this trend, the looming question is whether the cost of ... » read more

Execution Dependence Extension (EDE): ISA Support For Eliminating Fences
By Various Writers - 13 Oct, 2021 - Comments: 0

Fence instructions are a coarse-grained mechanism to enforce the order of instruction execution in an out-of-order pipeline. They are an overkill for cases when only one instruction must wait for the completion of one other instruction. For example, this is the case when performing undo logging in Non-Volatile Memory (NVM) systems: while the update of a variable needs to wait until the correspo... » read more

New Memories Add New Faults
By Bryon Moyer - 07 Sep, 2021 - Comments: 1

New non-volatile memories (NVM) bring new opportunities for changing how we use memory in systems-on-chip (SoCs), but they also add new challenges for making sure they will work as expected. These new memory types – primarily MRAM and ReRAM – rely on unique physical phenomena for storing data. That means that new test sequences and fault models may be needed before they can be released t... » read more

FeFETs Bring Promise And Challenges
By Bryon Moyer - 17 Feb, 2021 - Comments: 3

Ferroelectric FETs (FeFETs) and memory (FeRAM) are generating high levels of interest in the research community. Based on a physical mechanism that hasn’t yet been commercially exploited, they join the other interesting new physics ideas that are in various stages of commercialization. “FeRAM is very promising, but it's like all promising memory technologies — it takes a while to get b... » read more

Moving Data And Computing Closer Together
By Bryon Moyer - 09 Jul, 2020 - Comments: 2

The speed of processors has increased to the point where they often are no longer the performance bottleneck for many systems. It's now about data access. Moving data around costs both time and power, and developers are looking for ways to reduce the distances that data has to move. That means bringing data and memory nearer to each other. “Hard drives didn't have enough data flow to cr... » read more

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