EUV Flare And Proximity Modeling And Model-Based Correction

By Various Writers - 16 May, 2013 - Comments: 0

The introduction of EUV lithography into the semiconductor fabrication process will enable a continuation of Moore’s law below the 22 nm technology node. EUV lithography will, however, introduce new and unwanted sources of patterning distortions which must be accurately modeled and corrected on the reticle. Flare caused by scattered light in the projection optics is expected to result in seve... » read more

Double Patterning From Design Enablement To Verification

By Various Writers - 13 Dec, 2012 - Comments: 0

Litho-etch-litho-etch (LELE) is the double patterning (DP) technology of choice for 20 nm contact, via, and lower metal layers. We discuss the unique design and process characteristics of LELE DP, the challenges they present, and various solutions, including: DP design methodologies, current DP conflict feedback mechanisms, and how they can help designers identify and resolve conflicts. E... » read more

Beam Me Up

By Ed Sperling - 18 Oct, 2012 - Comments: 0

By Mark LaPedus For years, electron-beam tools have been struggling to keep up with photomask complexity, causing an alarming increase in write times and mask production costs. Intel and others recently warned that e-beams soon could reach their fundamental limits, thereby requiring the need for new solutions. And in the multiple patterning era, mask makers could see their capital costs soa... » read more

A Hybrid Model/Pattern-Based OPC Approach For Improved Consistency And TAT

By Various Writers - 20 Sep, 2012 - Comments: 0

As the technology advances, OPC run time turns to be a big concern, and a great deal of our effort is directed toward speeding up the litho operations. In addition, the OPC simulation consistency sometimes deteriorates, which is a critical issue—especially for anchor features. On the other hand, full-chip designs usually comprise large arrays of basic cells, used by OPC engineers to tune OPC ... » read more

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tag: OPC

EUV Flare And Proximity Modeling And Model-Based Correction

Double Patterning From Design Enablement To Verification

Beam Me Up

A Hybrid Model/Pattern-Based OPC Approach For Improved Consistency And TAT