tag: OPC

Is Multi-Patterning Good for You?
By David Abercrombie - 16 Oct, 2014 - Comments: 0

I think we can all remember growing up and our parents making us take nasty-tasting medicines, or eat foods we didn’t like, or endure painful things like shots, all under the banner of “It is good for you!” We didn’t like it then, and we still don’t like it as adults. We would all prefer a way to lose weight while eating anything we want, or building strong muscles and aerobic health ... » read more

Stopping Mask Hotspots Before They Escape The Mask Shop
By eBeam Initiative - 28 Apr, 2014 - Comments: 3

By Aki Fujimura The same types of physics-based issues that have haunted lithography for decades have started to impact mask writing as well. The increasingly small and complex mask shapes specified by optical proximity correction (OPC) that are now required for faithful wafer lithography at 28nm-and-below nodes have given rise to an increase in mask hotspots. Mask hotspots occur when the shap... » read more

A Guide To Advanced Process Design Kits
By Ernest Worthman - 14 Apr, 2014 - Comments: 1

The increasing complexity of design enablement has prompted manufacturers to optimize the design process. New tools and techniques, thanks to next-generation hardware and software, have provided a new platform for semiconductor and wafer design. Advanced PDKs are the solution and have been developed by foundries to optimize the design process and leverage and reuse intellectual property (IP) an... » read more

Multi-Beam Begins To Shine
By Mark LaPedus - 17 Oct, 2013 - Comments: 0

After years of R&D and promises, multi-beam electron-beam technology is delayed and late to the market. The technology requires more funding and work than previously thought. And generally, the skepticism is running high for the technology. Finally, however, there is a ray of hope, and some momentum, in multi-beam—at least on the photomask front. Seeking to accelerate its multi-beam te... » read more

A Study Of Model-Based Etch Bias Retarget For OPC
By Various Writers - 15 Aug, 2013 - Comments: 0

Model-based optical proximity correction is usually used to compensate for the pattern distortion during the microlithography process. Currently, almost all the lithography effects, such as the proximity effects from the limited NA, the 3D mask effects due to the shrinking critical dimension, the photo resist effects, and some other well known physical process, can all be well considered into m... » read more

Can Mask Data Prep Tools Manage Data Glut?
By Ann Mutschler - 15 Aug, 2013 - Comments: 0

By Ann Steffora Mutschler The trend to reduce critical dimension sizes has in turn increased design file sizes, especially with the addition of optical proximity correction (OPC) steps. This extra data translates to a bigger burden to be processed downstream in the flow on the way to the mask writer. At 28nm, design post-OPC data files sizes reach hundreds of gigabytes. With 20nm and below ... » read more

Seeing Spots At 10nm
By Ed Sperling - 15 Jul, 2013 - Comments: 0

By Ed Sperling The relentless march to smaller process nodes means the defects are getting smaller, more numerous, and much harder to find. That explains why Applied Materials and KLA-Tencor both introduced new defect review and classification tools last week. The move to the 1x nm is on the top of both companies’ agendas, and with that comes defects on the walls of finFETs in addition to... » read more

EUV Flare And Proximity Modeling And Model-Based Correction
By Various Writers - 16 May, 2013 - Comments: 0

The introduction of EUV lithography into the semiconductor fabrication process will enable a continuation of Moore’s law below the 22 nm technology node. EUV lithography will, however, introduce new and unwanted sources of patterning distortions which must be accurately modeled and corrected on the reticle. Flare caused by scattered light in the projection optics is expected to result in seve... » read more

Double Patterning From Design Enablement To Verification
By Various Writers - 13 Dec, 2012 - Comments: 0

Litho-etch-litho-etch (LELE) is the double patterning (DP) technology of choice for 20 nm contact, via, and lower metal layers. We discuss the unique design and process characteristics of LELE DP, the challenges they present, and various solutions, including: DP design methodologies, current DP conflict feedback mechanisms, and how they can help designers identify and resolve conflicts. E... » read more

Beam Me Up
By Ed Sperling - 18 Oct, 2012 - Comments: 0

By Mark LaPedus For years, electron-beam tools have been struggling to keep up with photomask complexity, causing an alarming increase in write times and mask production costs. Intel and others recently warned that e-beams soon could reach their fundamental limits, thereby requiring the need for new solutions. And in the multiple patterning era, mask makers could see their capital costs soa... » read more

← Older posts Newer posts →

  • Sponsors

About

Navigation

Connect With Us

Copyright ©2013-2024 SMG   |  Terms of Service  |  Privacy Policy