A new technical paper titled "Reduced Topography After Stop on Nitride (SON) STI CMP Through Improved Post-Bulk Planarity for Diverse Layouts in Advanced Nodes" was published by researchers at Fraunhofer IPMS.
Abstract
"Three methods for improving planarization in a ceria free, two step STI CMP process were investigated using patterned test wafers representing 2X nm technology. It was found...
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