Highly Stacked Nanowire FETs To Enhance Drive Current And Transistor Density

A technical paper titled “Fabrication and performance of highly stacked GeSi nanowire field effect transistors” was published by researchers at National Taiwan University. Abstract: "Horizontal gate-all-around field effect transistors (GAAFETs) are used to replace FinFETs due to their good electrostatics and short channel control. Highly stacked nanowire channels are widely believed to en... » read more