Chip Industry Technical Paper Roundup: Jan. 7


New technical papers recently added to Semiconductor Engineering’s library: [table id=395 /] Find all technical papers here. » read more

2D Ferroelectric Field-Effect Transistors (Penn State, U. of Minnesota)


A new technical paper titled "Multifunctional 2D FETs exploiting incipient ferroelectricity in freestanding SrTiO3 nanomembranes at sub-ambient temperatures" was published by researchers at Penn State University and University of Minnesota. Abstract "Incipient ferroelectricity bridges traditional dielectrics and true ferroelectrics, enabling advanced electronic and memory devices. Firstly... » read more

Chip Industry Week In Review


Concerns mount on the use of American-manufactured semiconductors in Russian weapons, with Analog Devices, AMD, Intel and TI set to testify next week before the U.S. Senate Permanent Subcommittee on Investigations. Also, U.S. and other government agencies issued a joint advisory and more details about ongoing Russian military cyberattacks, espionage, and sabotage. The U.S. Commerce Departmen... » read more

Chip Industry Week In Review


The U.S. Department of Commerce and Texas Instruments (TI) signed a non-binding preliminary memorandum of terms to provide up to $1.6 billion in CHIPS Act funding towards TI’s investment of over $18 billion for three 300mm semiconductor wafer fabs under construction in Texas and Utah. TI also expects to get about $6 billion to $8 billion from the U.S. Department of Treasury’s Investmen... » read more

Research Bits: May 7


High-temperature memory Researchers from the University of Pennsylvania and Air Force Research Laboratory demonstrated memory technology capable of enduring temperatures as high as 600° Celsius for more than 60 hours while retaining stability and reliability. The non-volatile memory device consists of a metal–insulator–metal structure, incorporating nickel and platinum electrodes with a 4... » read more

Chip Industry Week In Review


SK hynix and TSMC plan to collaborate on HBM4 development and next-generation packaging technology, with plans to mass produce HBM4 chips in 2026. The agreement is an early indicator for just how competitive, and potentially lucrative, the HBM market is becoming. SK hynix said the collaboration will enable breakthroughs in memory performance with increased density of the memory controller at t... » read more

Research Bits: Jan. 16


3D stacking of 2D materials Researchers from Penn State University demonstrated monolithic 3D integration with 2D transistors made from 2D semiconductors called transition metal dichalcogenides. The 2D materials have unique electronic and optical properties, including sensitivity to light, making them ideal for use as sensors. “One challenge is the process temperature ceiling of 450 degre... » read more

Week In Review: Auto, Security, Pervasive Computing


Former Apple engineer Weibao Wang was indicted for stealing Apple’s autonomous vehicle hardware and software IP and giving the information to Chinese competitors. Among other items, authorities said they found source code for the project on the engineer’s personal laptop, which was seized at his home. Wang fled to China the same day a search warrant was executed. This is one of five cases b... » read more

Chip Industry’s Technical Paper Roundup: Dec. 13


New technical papers added to Semiconductor Engineering’s library this week.[table id=70 /] If you have research papers you are trying to promote, we will review them to see if they are a good fit for our global audience. At a minimum, papers need to be well researched and documented, relevant to the semiconductor ecosystem, and free of marketing bias. There is no cost involved for us po... » read more

Rubbery Schottky Diodes Based on Soft, Stretchy Electronic Materials (Penn State)


A new technical paper titled "Fully rubbery Schottky diode and integrated devices" was published by researchers at Penn State University. The Office of Naval Research and the National Science Foundation funded this research. "Here, we report a fully rubbery Schottky diode constructed all based on stretchable electronic materials, including a liquid metal cathode, a rubbery semiconductor, and... » read more

← Older posts