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MXene-GaN van der Waals metal-semiconductor junctions for high performance multiple quantum well photodetectors


Abstract: "A MXene-GaN-MXene based multiple quantum well photodetector was prepared on patterned sapphire substrate by facile drop casting. The use of MXene electrodes improves the responsivity and reduces dark current, compared with traditional Metal-Semiconductor-Metal (MSM) photodetectors using Cr/Au electrodes. Dark current of the device using MXene-GaN van der Waals junctions is reduced b... » read more

Power/Performance Bits: April 11


High-efficiency silicon photodetector Electrical engineers at the University of California, Davis, and W&WSens Devices, Inc. built a new type of high-efficiency photodetector that could be monolithically integrated with silicon electronics. The new detector uses tapered holes in a silicon wafer to divert photons sideways, preserving the speed of thin-layer silicon and the efficiency o... » read more