Researchers develop a “direct chemisorption-assisted nanotransfer technique and combined it with metal-assisted chemical etching to enable the formation of ultra uniform silicon nanowires up to 6-inch wafer scale. “
New academic paper from Nanyang Technological University, Korea Institute of Machinery & Materials, and Southwest Jiaotong University.
Abstract
“Nanotransfer printing techniques have attracted significant attention due to their outstanding simplicity, cost-effectiveness, and high throughput. However, conventional methods via a chemical medium hamper the efficient fabrication with large-area uniformity and rapid development of electronic and photonic devices. Herein, we report a direct chemisorption-assisted nanotransfer printing technique based on the nanoscale lower melting effect, which is an enabling technology for two- or three-dimensional nanostructures with feature sizes ranging from tens of nanometers up to a 6 in. wafer-scale. The method solves the major bottleneck (large-scale uniform metal catalysts with nanopatterns) encountered by metal-assisted chemical etching. It also achieves wafer-scale, uniform, and controllable nanostructures with extremely high aspect ratios. We further demonstrate excellent uniformity and high performance of the resultant devices by fabricating 100 photodetectors on a 6 in. Si wafer. Therefore, our method can create a viable route for next-generation, wafer-scale, uniformly ordered, and controllable nanofabrication, leading to significant advances in various applications, such as energy harvesting, quantum, electronic, and photonic devices.”
Find the technical paper link here. Published Jan. 2022.
Zhi-Jun Zhao, Sang-Ho Shin, Sang Yeon Lee, Bongkwon Son, Yikai Liao, Soonhyoung Hwang, Sohee Jeon, Hyeokjoong Kang, Munho Kim, and Jun-Ho Jeong
ACS Nano 2022 16 (1), 378-385
DOI: 10.1021/acsnano.1c06781
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