tag: PIN diode

On The Reverse Breakdown Behavior Of GaAs PIN Diodes For High Power Applications

By Fraunhofer IIS/EAS - 11 Jan, 2023 - Comments: 0

In the field of power electronics, the compound semiconductors gallium nitride and silicon carbide are dominating the market. Due to its beneficial properties, gallium arsenide is gaining more and more importance. The aim is to manufacture devices based on gallium arsenide for use in power electronics with comparable or better properties, but at lower costs. In this work, a first GaAs PIN diode... » read more

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