The first GaAs PIN diode for 900 V operation is fabricated and characterized.
In the field of power electronics, the compound semiconductors gallium nitride and silicon carbide are dominating the market. Due to its beneficial properties, gallium arsenide is gaining more and more importance. The aim is to manufacture devices based on gallium arsenide for use in power electronics with comparable or better properties, but at lower costs. In this work, a first GaAs PIN diode for 900 V operation is fabricated and characterized. The temperature-dependent reverse breakdown behavior is investigated with the help of TCAD simulations and high-voltage measurements. Based on these results, an analytical model is generated which can reproduce this behavior. This enables further optimization of the GaAs PIN diode to optimally meet customer’s needs.
Author(s)
Patrick Scharf
Fraunhofer-Institut für Integrierte Schaltungen IIS, Institutsteil Entwicklung Adaptiver Systeme
Velarde Gonzalez and Fabio Alberto
Fraunhofer-Institut für Integrierte Schaltungen IIS, Institutsteil Entwicklung Adaptiver Systeme
André Lange
Fraunhofer-Institut für Integrierte Schaltungen IIS, Institutsteil Entwicklung Adaptiver Systeme
Tobias Urban and Volker Dudek
3-5 Power Electronics GmbH
Zeitschrift
Romanian journal of information science and technology
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