Testing High Power Discrete Devices

Emerging markets are driving the evolution of discrete power devices. Increased power requirements mean more power is being driven through a smaller device, creating challenges in both device design and test. This video series, 3 for 3, provides 3 answers for 3 pressing questions about trends in semiconductor test, and how testing for high power discrete devices is evolving. » read more

Production Testing Of Discrete Power Products

By Vineet Pancholi and Dennis Dinawanao Metal Oxide Silicon Field Effect Transistors (MOSFETs), Insulated Gate Bipolar Transistors (IGBTs), Bipolar Junction Transistors (BJTs), diodes, and application specific multi-transistor packaged modules are some of the more popular discrete products. Switches control the flow of current within a circuit. MOSFETs are a building block of most electronic... » read more

Increasing The Conductive Density Of Packaging

Wide bandgap (WBG) semiconductor technologies have created new challenges and opportunities for power packages. Developments such as silicon carbide (SiC) and gallium nitride (GaN), have a higher figure of merit (FOM) compared to silicon MOSFETs and have extended the efficiency, output power and/or switching frequency range and operating temperature range for power electronics. With lower lo... » read more