Inside EUV Resists

By Mark LaPedus - 17 Nov, 2016 - Comments: 3

Andrew Grenville, chief executive of resist maker Inpria, sat down with Semiconductor Engineering to talk about photoresists for extreme ultraviolet (EUV) lithography. What follows are excerpts of that conversation. SE: Photoresists are a critical part of lithography. Resists are light-sensitive materials. They form patterns on a surface when exposed to light. For EUV, they are critical. Wha... » read more

Good Filters, Poor Resists

By Katherine Derbyshire - 14 Sep, 2016 - Comments: 0

Shrinking feature sizes and more complex lithography schemes are increasing the pressure on all aspects of the lithography process, including resists and resist filtration. As Clint Haris, vice president and general manager for liquid micro contamination control at Entegris explained, fabs are pushing resist manufacturers toward more stringent control of both contaminants and “soft particl... » read more

Pain Points At 7nm

By Ed Sperling - 24 Mar, 2016 - Comments: 3

Early work has begun on 7nm. Process technology has progressed to the point where IP and tools are being qualified. There is still a long way to go. But as companies begin engaging with foundries on this process node—[getentity id="22586" comment="TSMC"] is talking publicly about it, but [getentity id="22846" e_name="Intel"], [getentity id="22819" comment="GlobalFoundries"] and [getentity ... » read more

The Next Resists…Continued

By Katherine Derbyshire - 17 Dec, 2015 - Comments: 1

As previously discussed, conventional chemically-amplified resists are struggling to balance the competing requirements of EUV lithography. Simultaneously meeting the industry’s targets for resolution, sensitivity, and line-edge roughness may require new resist concepts. Inpria’s resist technology, based on tin-oxide nano clusters, is one possibility. Recently published work at SUNY Albany ... » read more

What’s Really Causing Line-Edge Roughness?

By Katherine Derbyshire - 19 Nov, 2015 - Comments: 0

As previously discussed, shot noise is an important contributor to line edge roughness. However, as the title of one paper on the subject put it, “Do not always blame the photons.” The line edge roughness of a chemically amplified resist ultimately depends on photoacid generation and the deprotection of the resist’s base monomers. Photons absorbed by the resist simply trigger a chain ... » read more

Manufacturing Bits: Dec. 8

By Mark LaPedus - 08 Dec, 2014 - Comments: 1

Progress report on EUV resists The development of resists is a key part of extreme ultraviolet (EUV) lithography. “EUV resists are production ready,” said Kevin Cummings, Sematech’s director of lithography. “However, through Sematech’s work with the resist suppliers, we have observed a deceleration in the rate of improvements. As a result, Sematech is working not only with the re... » read more

Challenges In 3D Resists

By Katherine Derbyshire - 24 Mar, 2014 - Comments: 2

3D integration straddles the line between CMOS fabs and packaging and assembly houses. Depending on the structure being fabricated, the most appropriate process might be more “CMOS-like” or more “package-like.” For example, in CMOS fabs lithography means spin-on photoresist, exposed by a high precision stepper. Inherent in this approach is an assumption that the wafer surface is flat... » read more

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