Securing DRAM Against Evolving Rowhammer Threats


Advanced process nodes and higher silicon densities are heightening DRAM's susceptibility to Rowhammer attacks, as reduced cell spacing significantly decreases the hammer count needed for bit flips. Rowhammer exploits DRAM’s single-capacitor-per-bit design to trigger bit flips in adjacent cells through repeated memory row accesses. This vulnerability allows attackers to manipulate data, re... » read more

Memory’s Future Hinges On Reliability


Experts at the Table: Semiconductor Engineering sat down to talk about the impact of power and heat on off-chip memory, and what can be done to optimize performance, with Frank Ferro, group director, product management at Cadence; Steven Woo, fellow and distinguished inventor at Rambus; Jongsin Yun, memory technologist at Siemens EDA; Randy White, memory solutions program manager at Keysight; a... » read more

DRAM Simulator For Evaluation of Memory System Design Changes (ETH Zurich)


A technical paper titled “Ramulator 2.0: A Modern, Modular, and Extensible DRAM Simulator” was published by researchers at ETH Zurich. Abstract: "We present Ramulator 2.0, a highly modular and extensible DRAM simulator that enables rapid and agile implementation and evaluation of design changes in the memory controller and DRAM to meet the increasing research effort in improving the perfo... » read more

RowPress: Read-Disturb Phenomenon In DDR4 DRAM Chips


A technical paper titled "RowPress: Amplifying Read Disturbance in Modern DRAM Chips" was published by researchers at ETH Zürich. Abstract: "Memory isolation is critical for system reliability, security, and safety. Unfortunately, read disturbance can break memory isolation in modern DRAM chips. For example, RowHammer is a well-studied read-disturb phenomenon where repeatedly opening and clo... » read more

Uncovering The Size, Structure, And Operation Of DRAM Subarrays And Showing Experimental Results Supporting The Cause Of Rowhammer


A technical paper titled “X-ray: Discovering DRAM Internal Structure and Error Characteristics by Issuing Memory Commands” was published by researchers at Seoul National University and University of Illinois at Urbana-Champaign. Abstract: "The demand for accurate information about the internal structure and characteristics of dynamic random-access memory (DRAM) has been on the rise. Recen... » read more

Rowhammer Vulnerability Of A HBM2 DRAM Chip


A new technical paper titled "An Experimental Analysis of RowHammer in HBM2 DRAM Chips" was published by researchers at ETH Zurich and American University of Beirut. Abstract: "RowHammer (RH) is a significant and worsening security, safety, and reliability issue of modern DRAM chips that can be exploited to break memory isolation. Therefore, it is important to understand real DRAM chips' ... » read more

State of the Art And Future Directions of Rowhammer (ETH Zurich)


A new technical paper titled "Fundamentally Understanding and Solving RowHammer" was published by researchers at ETH Zurich. Abstract "We provide an overview of recent developments and future directions in the RowHammer vulnerability that plagues modern DRAM (Dynamic Random Memory Access) chips, which are used in almost all computing systems as main memory. RowHammer is the phenomenon in... » read more

How To Safeguard Memory Interfaces By Design


By Dana Neustadter and Brett Murdock In 2017, the credit bureau Equifax announced that hackers had breached its system, unleashing the personal information of 147-million people. As a result, the company has settled a class action suit for $425 million to aid those impacted, including identity theft, fraud, financial losses, and the expenses to clean up the damage. Whether the threat is iden... » read more

Week In Review: Design, Low Power


RISC-V The European Union said it will spend the equivalent of $286.5 million on a high performance computing ecosystem based on RISC-V. According to the call for proposals, the aim of the project is to “establish a partnership between the EuroHPC JU and a consortium of industry, research organizations and institutions in HPC to the development of innovative HPC hardware and software technol... » read more

Rowhammer Mitigation: In-DRAM Mechanism Scaling The Number of Refreshes With Activations (ETH Zurich)


A technical paper titled "REGA: Scalable Rowhammer Mitigation with Refresh-Generating Activations" was written by researchers at Computer Security Group (COMSEC), ETH Zurich and Zentel Japan. The paper will be presented at IEEE's Symposium on Security and Privacy in May 2023. "With REGA, we propose the first fully in-DRAM mitigation capable of protecting devices independently from their blas... » read more

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