Experimental Characterization Results and State-of-the-Art Device-Level Studies of DRAM Read Disturbance


A new technical paper titled "Revisiting DRAM Read Disturbance: Identifying Inconsistencies Between Experimental Characterization and Device-Level Studies" was published by researchers at ETH Zurich. Abstract "Modern DRAM is vulnerable to read disturbance (e.g., RowHammer and RowPress) that significantly undermines the robust operation of the system. Repeatedly opening and closing a DRAM ro... » read more

Temporal Variation in DRAM Read Disturbance in DDR4 and HBM2 (ETH Zurich, Rutgers)


A new technical paper titled "Variable Read Disturbance: An Experimental Analysis of Temporal Variation in DRAM Read Disturbance" was published by researchers at ETH Zurich and Rutgers University. Abstract "Modern DRAM chips are subject to read disturbance errors. State-of-the-art read disturbance mitigations rely on accurate and exhaustive characterization of the read disturbance threshold... » read more

DRAM Microarchitectures And Their Impacts On Activate-Induced Bitflips Such As RowHammer 


A technical paper titled “DRAMScope: Uncovering DRAM Microarchitecture and Characteristics by Issuing Memory Commands” was published by researchers at Seoul National University and University of Illinois at Urbana-Champaign. Abstract: "The demand for precise information on DRAM microarchitectures and error characteristics has surged, driven by the need to explore processing in memory, enh... » read more

Memory’s Future Hinges On Reliability


Experts at the Table: Semiconductor Engineering sat down to talk about the impact of power and heat on off-chip memory, and what can be done to optimize performance, with Frank Ferro, group director, product management at Cadence; Steven Woo, fellow and distinguished inventor at Rambus; Jongsin Yun, memory technologist at Siemens EDA; Randy White, memory solutions program manager at Keysight; a... » read more

RowPress: Read-Disturb Phenomenon In DDR4 DRAM Chips


A technical paper titled "RowPress: Amplifying Read Disturbance in Modern DRAM Chips" was published by researchers at ETH Zürich. Abstract: "Memory isolation is critical for system reliability, security, and safety. Unfortunately, read disturbance can break memory isolation in modern DRAM chips. For example, RowHammer is a well-studied read-disturb phenomenon where repeatedly opening and clo... » read more