Non-Stateful Logic Gates in ReRAM (RWTH Aachen, FZJ)


A new technical paper titled "Experimental Verification and Evaluation of Non-Stateful Logic Gates in Resistive RAM" was published by researchers at RWTH Aachen University and Forschungszentrum Jülich GmbH (FZJ). Abstract "Resistively switching, non-volatile memory devices facilitate new logic paradigms by combining storage and processing elements. Several non-stateful concepts such as Sco... » read more

Research Bits: Sept. 24


Modeling negative capacitance Researchers from Lawrence Berkeley National Laboratory developed an open-source 3D simulation framework capable of modeling the atomistic origins of negative capacitance in ferroelectric thin films at the device level. When a material has negative capacitance, it can store a greater amount of electrical charge at lower voltages. The team believes the FerroX fra... » read more

Memory Fundamentals For Engineers


Memory is one of a very few elite electronic components essential to any electronic system. Modern electronics perform extraordinarily complex duties that would be impossible without memory. Your computer obviously contains memory, but so does your car, your smartphone, your doorbell camera, your entertainment system, and any other gadget benefiting from digital electronics. This eBook prov... » read more

Modeling Compute In Memory With Biological Efficiency


The growing popularity of generative AI, which uses natural language to help users make sense of unstructured data, is forcing sweeping changes in how compute resources are designed and deployed. In a panel discussion on artificial intelligence at last week’s IEEE Electron Device Meeting, IBM’s Nicole Saulnier described it as a major breakthrough that should allow AI tools to assist huma... » read more

ReRAM Seeks To Replace NOR


Resistive RAM is gaining renewed attention as demand for faster and cheaper non-volatile memory alternatives continues to grow, particularly in applications such as automotive. Embedded flash has long left designers wishing for better write speeds and lower energy consumption, but as the leading edge of that technology shrunk to 28nm, another problem arose. Manufacturing flash memory at thos... » read more

Journey From Cell-Aware To Device-Aware Testing Begins


Early results of using device-aware testing on alternative memories show expanded test coverage, but this is just the start. Once the semiconductor industry realized that it was suffering from device failures even when test programs achieved 100% fault coverage, it went about addressing this disconnect between the way defects manifest themselves inside devices and the commonly used fault mod... » read more

In-Memory Computing: Assessing Multilevel RRAM-Based VMM Operations


A new technical paper titled "Experimental Assessment of Multilevel RRAM-Based Vector-Matrix Multiplication Operations for In-Memory Computing" was published by researchers at IHP (the Leibniz Institute for High Performance Microelectronics). Abstract: "Resistive random access memory (RRAM)-based hardware accelerators are playing an important role in the implementation of in-memory computin... » read more

Redesigning Core and Cache Hierarchy For A General-Purpose Monolithic 3D System


A technical paper titled "RevaMp3D: Architecting the Processor Core and Cache Hierarchy for Systems with Monolithically-Integrated Logic and Memory" was published by researchers at ETH Zürich, KMUTNB, NTUA, and University of Toronto. Abstract: "Recent nano-technological advances enable the Monolithic 3D (M3D) integration of multiple memory and logic layers in a single chip with fine-graine... » read more

Adaptive Memristive Hardware


A new technical paper titled "Self-organization of an inhomogeneous memristive hardware for sequence learning" was just published by researchers at University of Zurich, ETH Zurich, Université Grenoble Alpes, CEA, Leti and Toshiba. "We design and experimentally demonstrate an adaptive hardware architecture Memristive Self-organizing Spiking Recurrent Neural Network (MEMSORN). MEMSORN incorp... » read more

Efficient Neuromorphic AI Chip: “NeuroRRAM”


New technical paper titled "A compute-in-memory chip based on resistive random-access memory" was published by a team of international researchers at Stanford, UCSD, University of Pittsburgh, University of Notre Dame and Tsinghua University. The paper's abstract states "by co-optimizing across all hierarchies of the design from algorithms and architecture to circuits and devices, we present ... » read more

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