Room-Temperature Metal Bonding Technology That Facilitates The Fabrication of 3D-ICs & 3D Integration With Heterogeneous Devices


A technical paper titled "Room-Temperature Direct Cu Semi-Additive Plating (SAP) Bonding for Chip-on-Wafer 3D Heterogenous Integration With μLED" was published by researchers at Tohoku University in Japan. Abstract: "This letter describes a direct Cu bonding technology to there-dimensionally integrate heterogeneous dielets based on a chip-on-wafer configuration. 100- μm -cubed blue μ LED... » read more