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Consortium Results (Part 3 of 3): 20nm FDSOI Comes Out Way Ahead


The results of the most recent SOI Consortium benchmarking study detail the interest of planar FD-SOI as early as the 28nm and 20nm technology nodes, in terms of performance, power and manufacturability. This 3-part blog series looks further at some of the implications. ~~ The SOI Industry Consortium announcement at the end of the year provided silicon proof that FD-SOI handily bea... » read more

FD-SOI – Consortium Results (Part 2 of 3): Power and Performance


The results of the most recent SOI Consortium benchmarking study detail the interest of planar FD-SOI as early as the 28nm and 20nm technology nodes, in terms of performance, power and manufacturability. This 3-part blog series looks further at some of the implications. ~~ Fully depleted transistor architectures such as Planar FD-SOI, FinFETs (which is also a fully-depleted technolog... » read more