tag: Spintronics

Research Bits: Jan. 7
By Jesse Allen - 07 Jan, 2025 - Comments: 0

Deep UV microLED for maskless lithography Researchers from the Hong Kong University of Science and Technology, Southern University of Science and Technology, and the Suzhou Institute of Nanotechnology developed an aluminum gallium nitride deep-ultraviolet microLED display array for maskless lithography.  They also built a maskless lithography prototype platform. "The team achieved key brea... » read more

Advancements in SOT-MRAM Device Development (imec)
By Technical Paper Link - 28 Dec, 2024 - Comments: 0

A technical paper titled "Recent progress in spin-orbit torque magnetic random-access memory" was recently published by imec. Abstract "Spin-orbit torque magnetic random-access memory (SOT-MRAM) offers promise for fast operation and high endurance but faces challenges such as low switching current, reliable field free switching, and back-end of line manufacturing processes. We review rece... » read more

Multi-Faceted Spin Orbit Torque Phenomena in GdCo (Berkeley)
By Technical Paper Link - 09 Oct, 2024 - Comments: 0

A new technical paper titled "Tunable multistate field-free switching and ratchet effect by spin-orbit torque in canted ferrimagnetic alloy" was published by researchers at UC Berkeley and Lawrence Berkeley National Laboratory. The paper states: "Spin-orbit torque is not only a useful probe to study manipulation of magnetic textures and magnetic states at the nanoscale but also it carries g... » read more

2D van der Waals Magnets Above Room Temperature (MIT)
By Technical Paper Link - 09 Apr, 2024 - Comments: 0

A new technical paper titled "Field-free deterministic switching of all–van der Waals spin-orbit torque system above room temperature" was published by researchers at MIT, with funding by the NSF and U.S. Department of Energy. Abstract "Two-dimensional van der Waals (vdW) magnetic materials hold promise for the development of high-density, energy-efficient spintronic devices for memory an... » read more

Electrically Controlled All-AFM Tunnel Junctions on Silicon with Large Room-Temperature Magnetoresistance (Northwestern)
By Technical Paper Link - 02 Apr, 2024 - Comments: 0

A new technical paper titled "Electrically Controlled All-Antiferromagnetic Tunnel Junctions on Silicon with Large Room-Temperature Magnetoresistance" was published by researchers at Northwestern University, Universitat Jaume, California State University Northridge, Argonne National Lab, Politecnico diBari, and University of Messina. Abstract "Antiferromagnetic (AFM) materials are a pathway... » read more

Research Bits: August 15
By Jesse Allen - 15 Aug, 2023 - Comments: 0

Using noise for spintronics Researchers from the Institute for Basic Science built a vertical magnetic tunneling junction device by sandwiching a few layers of vanadium in tungsten diselenide (V-WSe2), a magnetic material, between top and bottom graphene electrodes to create high-amplitude Random Telegraph Noise (RTN) signals. Through the resistance measurement experiments using these devic... » read more

A Field-Free Switching Solution For SOT Magnetic Tunnel Junction Devices
By Technical Paper Link - 24 Jun, 2023 - Comments: 0

A technical paper titled “Field-Free Spin-Orbit Torque Driven Switching of Perpendicular Magnetic Tunnel Junction through Bending Current” was published by researchers at KU Leuven, ETH Zurich, and IMEC. Abstract: "Current-induced spin-orbit torques (SOTs) enable fast and efficient manipulation of the magnetic state of magnetic tunnel junctions (MTJs), making them attractive for memory, i... » read more

Research Bits: May 10
By Jesse Allen - 10 May, 2023 - Comments: 0

Growing 2D TMDs on chips Researchers from Massachusetts Institute of Technology (MIT), Oak Ridge National Laboratory, and Ericsson Research found a way to “grow” layers of 2D transition metal dichalcogenide (TMD) materials directly on top of a fully fabricated silicon chip, a technique they say could enable denser integrations. The researchers focused on molybdenum disulfide, which is f... » read more

Feasibility of Using Domain Wall-Magnetic Tunnel Junction for Magnetic Analog Addressable Memories
By Technical Paper Link - 23 Mar, 2023 - Comments: 0

A new technical paper titled "Domain Wall-Magnetic Tunnel Junction Analog Content Addressable Memory Using Current and Projected Data" was published by researchers at UT Austin and Samsung Advanced Institute of Technology (SAIT). Abstract "With the rise in in-memory computing architectures to reduce the compute-memory bottleneck, a new bottleneck is present between analog and digital conver... » read more

New Spintronics Manufacturing Process, Allowing Scaling Down To Sub-5nm (U. of Minnesota/NIST)
By Technical Paper Link - 20 Mar, 2023 - Comments: 0

A new technical paper titled "Sputtered L10-FePd and its Synthetic Antiferromagnet on Si/SiO2 Wafers for Scalable Spintronics" was published by researchers at University of Minnesota and NIST, with funding by DARPA and others. According to a University of Minnesota summary news article, "The industry standard spintronic material, cobalt iron boron, has reached a limit in its scalability. The... » read more

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