tag: Spintronics

2D van der Waals Magnets Above Room Temperature (MIT)
By Technical Paper Link - 09 Apr, 2024 - Comments: 0

A new technical paper titled "Field-free deterministic switching of all–van der Waals spin-orbit torque system above room temperature" was published by researchers at MIT, with funding by the NSF and U.S. Department of Energy. Abstract "Two-dimensional van der Waals (vdW) magnetic materials hold promise for the development of high-density, energy-efficient spintronic devices for memory an... » read more

Electrically Controlled All-AFM Tunnel Junctions on Silicon with Large Room-Temperature Magnetoresistance (Northwestern)
By Technical Paper Link - 02 Apr, 2024 - Comments: 0

A new technical paper titled "Electrically Controlled All-Antiferromagnetic Tunnel Junctions on Silicon with Large Room-Temperature Magnetoresistance" was published by researchers at Northwestern University, Universitat Jaume, California State University Northridge, Argonne National Lab, Politecnico diBari, and University of Messina. Abstract "Antiferromagnetic (AFM) materials are a pathway... » read more

Research Bits: August 15
By Jesse Allen - 15 Aug, 2023 - Comments: 0

Using noise for spintronics Researchers from the Institute for Basic Science built a vertical magnetic tunneling junction device by sandwiching a few layers of vanadium in tungsten diselenide (V-WSe2), a magnetic material, between top and bottom graphene electrodes to create high-amplitude Random Telegraph Noise (RTN) signals. Through the resistance measurement experiments using these devic... » read more

A Field-Free Switching Solution For SOT Magnetic Tunnel Junction Devices
By Technical Paper Link - 24 Jun, 2023 - Comments: 0

A technical paper titled “Field-Free Spin-Orbit Torque Driven Switching of Perpendicular Magnetic Tunnel Junction through Bending Current” was published by researchers at KU Leuven, ETH Zurich, and IMEC. Abstract: "Current-induced spin-orbit torques (SOTs) enable fast and efficient manipulation of the magnetic state of magnetic tunnel junctions (MTJs), making them attractive for memory, i... » read more

Research Bits: May 10
By Jesse Allen - 10 May, 2023 - Comments: 0

Growing 2D TMDs on chips Researchers from Massachusetts Institute of Technology (MIT), Oak Ridge National Laboratory, and Ericsson Research found a way to “grow” layers of 2D transition metal dichalcogenide (TMD) materials directly on top of a fully fabricated silicon chip, a technique they say could enable denser integrations. The researchers focused on molybdenum disulfide, which is f... » read more

Feasibility of Using Domain Wall-Magnetic Tunnel Junction for Magnetic Analog Addressable Memories
By Technical Paper Link - 23 Mar, 2023 - Comments: 0

A new technical paper titled "Domain Wall-Magnetic Tunnel Junction Analog Content Addressable Memory Using Current and Projected Data" was published by researchers at UT Austin and Samsung Advanced Institute of Technology (SAIT). Abstract "With the rise in in-memory computing architectures to reduce the compute-memory bottleneck, a new bottleneck is present between analog and digital conver... » read more

New Spintronics Manufacturing Process, Allowing Scaling Down To Sub-5nm (U. of Minnesota/NIST)
By Technical Paper Link - 20 Mar, 2023 - Comments: 0

A new technical paper titled "Sputtered L10-FePd and its Synthetic Antiferromagnet on Si/SiO2 Wafers for Scalable Spintronics" was published by researchers at University of Minnesota and NIST, with funding by DARPA and others. According to a University of Minnesota summary news article, "The industry standard spintronic material, cobalt iron boron, has reached a limit in its scalability. The... » read more

Phononic and Magnonic Properties of 1D MoI3 Nanowires
By Technical Paper Link - 28 Nov, 2022 - Comments: 0

A new technical paper titled "Elemental excitations in MoI3 one-dimensional van der Waals nanowires" was published by researchers at NIST, UC Riverside, University of Georgia, Theiss Research Inc, and Stanford University. "We described here the elemental excitations in crystals of MoI3 a vdW [van der Waals] material with a true-1D crystal structure. Our measurements reveal anomalous temperat... » read more

3D Racetrack Memory Device (Max Planck)
By Technical Paper Link - 26 Oct, 2022 - Comments: 0

A new technical paper titled "Three-dimensional racetrack memory devices designed from freestanding magnetic heterostructures" was published by researchers at Max Planck Institute of Microstructure Physics in Halle, Germany. "Magnetic racetrack memory encodes data in a series of magnetic domain walls that are moved by current pulses along magnetic nanowires. To date, most studies have focuse... » read more

Research Bits: Aug. 8
By Jesse Allen - 08 Aug, 2022 - Comments: 0

Speeding NVM encryption Researchers from North Carolina State University propose a way to speed up encryption and file system performance for non-volatile memory (NVM). “NVMs are an emerging technology that allows rapid access to the data, and retains data even when a system crashes or loses power,” said Amro Awad, an assistant professor of electrical and computer engineering at North C... » read more

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