Research Bits: June 8


Multi-tasking transistor Researchers at Pohang University of Science & Technology (POSTECH) developed a zinc oxide (ZnO) and tellurium (Te) heterojunction transistor technology that exhibits negative differential transconductance (NDT), where current decreases over a certain voltage range. By precisely controlling overlap length between the two materials, the team realized double negati... » read more

Scalable AI/ML Method For Improved MTJ Performance (UT Austin, TSMC, TDK Headway)


A new technical paper titled "LEAD: Literature Enhanced Ab Initio Discovery of Nitride Dusting Layers for Enhanced Tunnel Magnetoresistance and Lower Resistance Magnetic Tunnel Junctions" was published by researchers at University of Texas at Austin, TSMC, and TDK Headway Technologies Inc. Abstract "Magnetic tunnel junctions (MTJs) using magnesium oxide (MgO) tunnel barriers face challenges... » read more

Research Bits: Sept. 30


Hybrid memory for edge training and inference Researchers from CEA-Leti, Université Grenoble Alpes, CEA-List, the French National Centre for Scientific Research (CNRS), the University of Bordeaux, Bordeaux INP, IMS France, Université Paris-Saclay, and the Center for Nanosciences and Nanotechnologies developed a hybrid memory system that combines the traits of ferroelectric capacitors (FeCAP)... » read more

Research Bits: Jan. 20


Self-correcting memristor array Researchers at Korea Advanced Institute of Science and Technology (KAIST), Seoul National University, Sungkyunkwan University, Electronics and Telecommunications Research Institute (ETRI), and Yonsei University developed a memristor-based neuromorphic chip that can learn and correct errors, enabling it to adapt to immediate environmental changes. The system c... » read more

Research Bits: Jan. 7


Deep UV microLED for maskless lithography Researchers from the Hong Kong University of Science and Technology, Southern University of Science and Technology, and the Suzhou Institute of Nanotechnology developed an aluminum gallium nitride deep-ultraviolet microLED display array for maskless lithography.  They also built a maskless lithography prototype platform. "The team achieved key brea... » read more

Advancements in SOT-MRAM Device Development (imec)


A technical paper titled "Recent progress in spin-orbit torque magnetic random-access memory" was recently published by imec. Abstract "Spin-orbit torque magnetic random-access memory (SOT-MRAM) offers promise for fast operation and high endurance but faces challenges such as low switching current, reliable field free switching, and back-end of line manufacturing processes. We review rece... » read more

Multi-Faceted Spin Orbit Torque Phenomena in GdCo (Berkeley)


A new technical paper titled "Tunable multistate field-free switching and ratchet effect by spin-orbit torque in canted ferrimagnetic alloy" was published by researchers at UC Berkeley and Lawrence Berkeley National Laboratory. The paper states: "Spin-orbit torque is not only a useful probe to study manipulation of magnetic textures and magnetic states at the nanoscale but also it carries g... » read more

2D van der Waals Magnets Above Room Temperature (MIT)


A new technical paper titled "Field-free deterministic switching of all–van der Waals spin-orbit torque system above room temperature" was published by researchers at MIT, with funding by the NSF and U.S. Department of Energy. Abstract "Two-dimensional van der Waals (vdW) magnetic materials hold promise for the development of high-density, energy-efficient spintronic devices for memory an... » read more

Electrically Controlled All-AFM Tunnel Junctions on Silicon with Large Room-Temperature Magnetoresistance (Northwestern)


A new technical paper titled "Electrically Controlled All-Antiferromagnetic Tunnel Junctions on Silicon with Large Room-Temperature Magnetoresistance" was published by researchers at Northwestern University, Universitat Jaume, California State University Northridge, Argonne National Lab, Politecnico diBari, and University of Messina. Abstract "Antiferromagnetic (AFM) materials are a pathway... » read more

Research Bits: August 15


Using noise for spintronics Researchers from the Institute for Basic Science built a vertical magnetic tunneling junction device by sandwiching a few layers of vanadium in tungsten diselenide (V-WSe2), a magnetic material, between top and bottom graphene electrodes to create high-amplitude Random Telegraph Noise (RTN) signals. Through the resistance measurement experiments using these devic... » read more

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