Surface-Activated ALD For Room-Temperature Bonding of Al2O3

A new technical paper titled "Room-temperature bonding of Al2O3 thin films deposited using atomic layer deposition" was published by researchers at Kyushu University. Abstract "In this study, room-temperature wafer bonding of Al2O3 thin films on Si thermal oxide wafers, which were deposited using atomic layer deposition (ALD), was realized using the surface-activated bonding (SAB) metho... » read more

Fabrication of GaN/Diamond Heterointerface and Interfacial Chemical Bonding State for Highly Efficient Device Design

Abstract "The direct integration of gallium nitride (GaN) and diamond holds much promise for high-power devices. However, it is a big challenge to grow GaN on diamond due to the large lattice and thermal-expansion coefficient mismatch between GaN and diamond. In this work, the fabrication of a GaN/diamond heterointerface is successfully achieved by a surface activated bonding (SAB) method at r... » read more

Power/Performance Bits: April 14

Undoped polymer ink Researchers at Linköping University, Chalmers University of Technology, University of Washington, University of Cologne, Chiba University, and Yunnan University developed an organic ink for printable electronics that doesn't need to be doped for good conductivity. "We normally dope our organic polymers to improve their conductivity and the device performance. The proces... » read more