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Fabrication of GaN/Diamond Heterointerface and Interfacial Chemical Bonding State for Highly Efficient Device Design


Abstract "The direct integration of gallium nitride (GaN) and diamond holds much promise for high-power devices. However, it is a big challenge to grow GaN on diamond due to the large lattice and thermal-expansion coefficient mismatch between GaN and diamond. In this work, the fabrication of a GaN/diamond heterointerface is successfully achieved by a surface activated bonding (SAB) method at r... » read more

Power/Performance Bits: April 14


Undoped polymer ink Researchers at Linköping University, Chalmers University of Technology, University of Washington, University of Cologne, Chiba University, and Yunnan University developed an organic ink for printable electronics that doesn't need to be doped for good conductivity. "We normally dope our organic polymers to improve their conductivity and the device performance. The proces... » read more