A technical paper titled “Shockley-Read-Hall recombination and trap levels in In0.53 Ga0.47As point defects from first principles” was published by researchers at University of Glasgow and Synopsys Denmark.
Abstract:
"We present charge state transition levels of 23 intrinsic defects and dopant substitutions in the compound III-V semiconductor In0.53 Ga0.47 As, calculated with density func...
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