Power/Performance Bits: Nov. 7

Speeding up MRAM Researchers at UC Berkeley and UC Riverside developed an ultrafast method for electrically controlling magnetism in certain metals, which could lead to increased performance for magnetic RAM. While the nonvolatility of MRAM is a boon, speeding up the writing of a single bit of information to less than 10 nanoseconds has been a challenge. “The development of a non-volatile... » read more