Applying Machine Learning To Accelerate TCAD Calibration

TCAD models are the fundamental building blocks for the semiconductor industry. Whether it is a new process node or a new multi-billion dollar fab, accurate TCAD models must be developed and calibrated before they can be deployed in technology development. While TCAD models have been around for (many) decades, their complexity is growing exponentially, as is the demands placed on the R&D en... » read more

Device Characteristics of GAA-Structured CMOS and CTFET Under Varying Temperatures

A new technical paper titled "Vertical-Stack Nanowire Structure of MOS Inverter and TFET Inverter in Low-temperature Application" was published by researchers at National Tsing Hua University and National United University in Taiwan. Abstract "Tunneling field effect transistors (TFET) have emerged as promising candidates for integrated circuits beyond conventional metal oxide semiconductor ... » read more

Using TCAD To Simulate Wide-Bandgap Materials For Electronics Design

Wide-bandgap (WBG) semiconductors are a class of materials that can offer a range of advantages over silicon. These materials can operate at higher voltages and higher temperatures, serving as critical enablers of innovation in Power and RF applications and functioning in a wider range of environments that are sometimes extreme. Electronics applications benefit from these wide-bandgap materials... » read more

What Is TCAD And Why It Is Essential For The Semiconductor Industry

Modern technology computer-aided design (TCAD) technologies have been around now for years. Yet, many semiconductor engineers still run experiments directly on wafers to examine chip fabrication processes and device operation. While it can be challenging to become proficient in TCAD, conducting experiments on wafers isn’t exactly easy, nor is it quick or cost-effective to do. As with so ma... » read more

Highly Stacked Nanowire FETs To Enhance Drive Current And Transistor Density

A technical paper titled “Fabrication and performance of highly stacked GeSi nanowire field effect transistors” was published by researchers at National Taiwan University. Abstract: "Horizontal gate-all-around field effect transistors (GAAFETs) are used to replace FinFETs due to their good electrostatics and short channel control. Highly stacked nanowire channels are widely believed to en... » read more

Improving The Retention Characteristics Of 3D NAND Flash Memories

A technical paper titled “3D NAND Flash Memory Cell Current and Interference Characteristics Improvement With Multiple Dielectric Spacer” was published by researchers at Myongji University, Soongsil University, and Seoul National University. Abstract: "To achieve high density, the spacer length of three dimensional (3D) NAND device has been scaled down. When the program/erase cycle repeat... » read more

Improving ML-Based Device Modeling Using Variational Autoencoder Techniques

A technical paper titled “Improving Semiconductor Device Modeling for Electronic Design Automation by Machine Learning Techniques” was published by researchers at Commonwealth Scientific and Industrial Research Organisation (CSIRO), Peking University, National University of Singapore, and University of New South Wales. Abstract: "The semiconductors industry benefits greatly from the integ... » read more

Applying a Floating Gate Field Effect Transistor To A Logic-in-Memory Application Circuit Design

A technical paper titled “Analysis of Logic-in-Memory Full Adder Circuit With Floating Gate Field Effect Transistor (FGFET)” was published by researchers at Konkuk University, Korea National University of Transportation, Samsung Electronics, and Sungkyunkwan University. Abstract: "The high data throughput and high energy efficiency required recently are increasingly difficult to implement... » read more

Challenges In Ramping New Manufacturing Processes

Despite a slowdown for Moore’s Law, there are more new manufacturing processes rolling out faster than ever before. The challenge now is to decrease time to yield, which involves everything from TCAD and design technology co-optimization, to refinement of power, performance, area/cost, and process control and analytics. Srinivas Raghvendra, vice president of engineering at Synopsys, talks abo... » read more

What Designers Need To Know About GAA

While only 12 years old, finFETs are reaching the end of the line. They are being supplanted by gate-all-around (GAA), starting at 3nm [1], which is expected to have a significant impact on how chips are designed. GAAs come in two main flavors today — nanosheets and nanowires. There is much confusion about nanosheets, and the difference between nanosheets and nanowires. The industry still ... » read more

← Older posts