Investigating The Ru/Ta Bilayer As An Alternative EUV Absorber To Mitigate Mask 3D Effects

A technical paper titled “Ru/Ta bilayer approach to EUV mask absorbers: Experimental patterning and simulated imaging perspective” was published by researchers at KU Leuven and imec. Abstract: "The optical properties and geometry of EUV mask absorbers play an essential role in determining the imaging performance of a mask in EUV lithography. Imaging metrics, including Normalized Imag... » read more

48V Applications Drive Power IC Package Options

The manufacturing process and die get most of the attention, but the packaging plays an important part in enabling and limiting performance, manufacturability, particularly when it comes to reliability of power devices. Given the wide range of underlying semiconductor power-device technologies — “basic” silicon, wide-bandgap silicon carbide (SiC) and gallium nitride (GaN), power levels... » read more