Overview of ALD-Driven Oxide Semiconductors for High Density, Low Power Memory Architectures (Hanyang Univ., imec)


A new technical paper titled "Oxide Semiconductor for Advanced Memory Architectures: Atomic Layer Deposition, Key Requirement and Challenges" was published by researchers a Hanyang University and imec. Abstract "Oxide semiconductors (OSs), introduced by the Hosono group in the early 2000s, have evolved from display backplane materials to promising candidates for advanced memory and logic ... » read more

Low Temperature Cu-Cu Bonding for Advanced Packaging (NYCU)


A new technical paper titled "Thermal stability enhancement of low temperature Cu-Cu bonding using metal passivation technology for advanced electronic packaging" was published by researchers at National Yang Ming Chiao Tung University. Abstract "This work investigates the thermal stability of Cu-Cu bonding using a thin Ag passivation layer in applications targeting advanced packaging. Co... » read more

SiGeSn SBFETs at Cryogenic Temperatures (Tu Wien et al)


A new technical paper titled "A Cryogenic Ultra-Thin Body SiGeSn Transistor" was published by researchers at TU Wien, Johannes Kepler University, Universidad de Granada, and Max Planck Institute for Sustainable Materials. Abstract "Transistors capable of operating at cryogenic temperatures are key components for the fast and energy-efficient control and readout of qubits. However, the ultra... » read more

An Overview Of Recent Progress On The EUV + DSA Strategy (Univ. of Chicago, Berkeley Lab, Argonne)


A new technical paper titled "Directed self-assembly of block copolymers for high-precision patterning in the era of extreme ultraviolet lithography" was published by researchers at University of Chicago, Lawrence Berkeley National Laboratory and Argonne National Laboratory. Abstract "Extreme ultraviolet (EUV) lithography enables unprecedented resolution in semiconductor patterning but face... » read more

High-Performance p-type 2D FETs By Nitric Oxide Doping (Penn State)


A new technical paper titled "High-performance p-type bilayer WSe2 field effect transistors by nitric oxide doping" was published by researchers at Penn State University and Florida International University. Abstract "Two-dimensional (2D) materials are promising candidates for next-generation electronics, but the realization of high-performance p-type 2D field-effect transistors (FETs) has... » read more

Temporary Bonding: Enabling the Next Generation of Ultrathin Wafers


Innovative materials are critical for maintaining integrity during advanced semiconductor manufacturing processes. Temporary bonding is being enabled by these new materials and is making a name for itself in the next generation of ultrathin wafer manufacturing. Semiconductor wafers are being forced to become thinner as the push to shrink feature sizes and introduce full-scale 3D integration ... » read more