High-Performance p-type 2D FETs By Nitric Oxide Doping (Penn State)


A new technical paper titled "High-performance p-type bilayer WSe2 field effect transistors by nitric oxide doping" was published by researchers at Penn State University and Florida International University. Abstract "Two-dimensional (2D) materials are promising candidates for next-generation electronics, but the realization of high-performance p-type 2D field-effect transistors (FETs) has... » read more

Temporary Bonding: Enabling the Next Generation of Ultrathin Wafers


Innovative materials are critical for maintaining integrity during advanced semiconductor manufacturing processes. Temporary bonding is being enabled by these new materials and is making a name for itself in the next generation of ultrathin wafer manufacturing. Semiconductor wafers are being forced to become thinner as the push to shrink feature sizes and introduce full-scale 3D integration ... » read more