tag: TMDs

Ultranarrow Semiconductor WS2 Nanoribbon FETs (Chalmers)
By Technical Paper Link - 29 Jan, 2025 - Comments: 0

A new technical paper titled "Ultranarrow Semiconductor WS2 Nanoribbon Field-Effect Transistors" was published by researchers at Chalmers University of Technology. Abstract "Semiconducting transition metal dichalcogenides (TMDs) have attracted significant attention for their potential to develop high-performance, energy-efficient, and nanoscale electronic devices. Despite notable advancem... » read more

Electronic and Transport Properties of Six TMD Heterostructures
By Technical Paper Link - 24 Jan, 2025 - Comments: 0

A new technical paper titled "Computational Assessment of I–V Curves and Tunability of 2D Semiconductor van der Waals Heterostructures" was published by researchers at Chalmers University of Technology. Abstract "Two-dimensional (2D) transition metal dichalcogenides (TMDs) have received significant interest for use in tunnel field-effect transistors (TFETs) due to their ultrathin layers... » read more

Research Bits: Dec. 24
By Jesse Allen - 24 Dec, 2024 - Comments: 0

Growing multilayered chips Researchers from MIT, Samsung Advanced Institute of Technology, Sungkyunkwan University, and University of Texas at Dallas developed a method to fabricate a multilayered chip with alternating layers of semiconducting material grown directly on top of each other. The approach enables high-performance transistors and memory and logic elements on any random crystalline ... » read more

2D Semiconductors Make Progress, But So Does Silicon
By Katherine Derbyshire - 30 Oct, 2024 - Comments: 1

Semiconductor industry researchers have been anticipating the need for better transistor channel materials to replace silicon for a long time, but silicon devices have continued to improve enough to postpone that change. Silicon continues to provide an unmatched combination of device performance, manufacturability, and cost effectiveness. In recent years, though, the “end of silicon” cha... » read more

Excitonic Phenomena in TMDs (Harvard, Google, Stanford et al.)
By Technical Paper Link - 17 Jul, 2024 - Comments: 0

A new technical paper titled "Dynamical Control of Excitons in Atomically Thin Semiconductors" was published by researchers at Harvard University, Google Research, Stanford University, UC Riverside and others. Abstract "Excitons in transition metal dichalcogenides (TMDs) have emerged as a promising platform for novel applications ranging from optoelectronic devices to quantum optics and sol... » read more

Tweaking Isotopes In Thin Semiconductor Materials Can Influence Optical And Electronic Properties 
By Technical Paper Link - 14 May, 2024 - Comments: 0

A technical paper titled “Anomalous isotope effect on the optical bandgap in a monolayer transition metal dichalcogenide semiconductor” was published by researchers at Oak Ridge National Laboratory (ORNL) and University of Central Florida. Abstract: "Isotope effects have received increasing attention in materials science and engineering because altering isotopes directly affects phonons, ... » read more

Investigating Subthreshold Current Suppression in ReS2 Nanosheet-Based FETs
By Technical Paper Link - 26 Nov, 2023 - Comments: 0

A technical paper titled “Subthreshold Current Suppression in ReS2 Nanosheet-Based Field-Effect Transistors at High Temperatures” was published by researchers at University of Salerno, Università degli studi del Sannio, and University of Exeter. Abstract: "Two-dimensional rhenium disulfide (ReS2), a member of the transition-metal dichalcogenide family, has received significant attention... » read more

A New Layered Structure With 2D Material That Exhibits A Unique Transfer Of Energy And Charge
By Technical Paper Link - 06 Sep, 2023 - Comments: 0

A technical paper titled “Excitation-Dependent High-Lying Excitonic Exchange via Interlayer Energy Transfer from Lower-to-Higher Bandgap 2D Material” was published by researchers at University of Warsaw, Brookhaven National Laboratory, and National Institute for Materials Science (Japan). Abstract: "High light absorption (∼15%) and strong photoluminescence (PL) emission in monolayer (1L... » read more

How Band Nesting Can Achieve Near-Perfect Optical Absorption In Just Two Layers Of TMD Materials
By Technical Paper Link - 02 Aug, 2023 - Comments: 0

A technical paper titled “Achieving near-perfect light absorption in atomically thin transition metal dichalcogenides through band nesting” was published by researchers at University of Minnesota, University of Notre Dame, and Korea Advanced Institute of Science and Technology (KAIST). Abstract: "Near-perfect light absorbers (NPLAs), with absorbance, λ, of at least 99%, have a wide ... » read more

Antenna For Nanoscale Light Source By Placing The TMD Outside The Tunnelling Pathway
By Technical Paper Link - 13 Jul, 2023 - Comments: 0

A technical paper titled "Exciton-assisted electron tunnelling in van der Waals heterostructures" was published by researchers at ETH Zürich, The Barcelona Institute of Science and Technology, Swiss Federal Laboratories for Materials Science and Technology, National Institute for Materials Science, University of Basel, and Institució Catalana de Recerca i Estudis Avançats (ICREA). Abstract:... » read more

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