2D Semiconductors Make Progress, But So Does Silicon

By Katherine Derbyshire - 30 Oct, 2024 - Comments: 1

Semiconductor industry researchers have been anticipating the need for better transistor channel materials to replace silicon for a long time, but silicon devices have continued to improve enough to postpone that change. Silicon continues to provide an unmatched combination of device performance, manufacturability, and cost effectiveness. In recent years, though, the “end of silicon” cha... » read more

Excitonic Phenomena in TMDs (Harvard, Google, Stanford et al.)

By Technical Paper Link - 17 Jul, 2024 - Comments: 0

A new technical paper titled "Dynamical Control of Excitons in Atomically Thin Semiconductors" was published by researchers at Harvard University, Google Research, Stanford University, UC Riverside and others. Abstract "Excitons in transition metal dichalcogenides (TMDs) have emerged as a promising platform for novel applications ranging from optoelectronic devices to quantum optics and sol... » read more

Tweaking Isotopes In Thin Semiconductor Materials Can Influence Optical And Electronic Properties

By Technical Paper Link - 14 May, 2024 - Comments: 0

A technical paper titled “Anomalous isotope effect on the optical bandgap in a monolayer transition metal dichalcogenide semiconductor” was published by researchers at Oak Ridge National Laboratory (ORNL) and University of Central Florida. Abstract: "Isotope effects have received increasing attention in materials science and engineering because altering isotopes directly affects phonons, ... » read more

Investigating Subthreshold Current Suppression in ReS2 Nanosheet-Based FETs

By Technical Paper Link - 26 Nov, 2023 - Comments: 0

A technical paper titled “Subthreshold Current Suppression in ReS2 Nanosheet-Based Field-Effect Transistors at High Temperatures” was published by researchers at University of Salerno, Università degli studi del Sannio, and University of Exeter. Abstract: "Two-dimensional rhenium disulfide (ReS2), a member of the transition-metal dichalcogenide family, has received significant attention... » read more

A New Layered Structure With 2D Material That Exhibits A Unique Transfer Of Energy And Charge

By Technical Paper Link - 06 Sep, 2023 - Comments: 0

A technical paper titled “Excitation-Dependent High-Lying Excitonic Exchange via Interlayer Energy Transfer from Lower-to-Higher Bandgap 2D Material” was published by researchers at University of Warsaw, Brookhaven National Laboratory, and National Institute for Materials Science (Japan). Abstract: "High light absorption (∼15%) and strong photoluminescence (PL) emission in monolayer (1L... » read more

How Band Nesting Can Achieve Near-Perfect Optical Absorption In Just Two Layers Of TMD Materials

By Technical Paper Link - 02 Aug, 2023 - Comments: 0

A technical paper titled “Achieving near-perfect light absorption in atomically thin transition metal dichalcogenides through band nesting” was published by researchers at University of Minnesota, University of Notre Dame, and Korea Advanced Institute of Science and Technology (KAIST). Abstract: "Near-perfect light absorbers (NPLAs), with absorbance, λ, of at least 99%, have a wide ... » read more

Antenna For Nanoscale Light Source By Placing The TMD Outside The Tunnelling Pathway

By Technical Paper Link - 13 Jul, 2023 - Comments: 0

A technical paper titled "Exciton-assisted electron tunnelling in van der Waals heterostructures" was published by researchers at ETH Zürich, The Barcelona Institute of Science and Technology, Swiss Federal Laboratories for Materials Science and Technology, National Institute for Materials Science, University of Basel, and Institució Catalana de Recerca i Estudis Avançats (ICREA). Abstract:... » read more

Research Bits: May 10

By Jesse Allen - 10 May, 2023 - Comments: 0

Growing 2D TMDs on chips Researchers from Massachusetts Institute of Technology (MIT), Oak Ridge National Laboratory, and Ericsson Research found a way to “grow” layers of 2D transition metal dichalcogenide (TMD) materials directly on top of a fully fabricated silicon chip, a technique they say could enable denser integrations. The researchers focused on molybdenum disulfide, which is f... » read more

Reducing Contact Resistance in Developing Transistors Based On 2D Materials

By Technical Paper Link - 10 Mar, 2023 - Comments: 0

A new technical paper titled "WS2 Transistors with Sulfur Atoms Being Replaced at the Interface: First-Principles Quantum-Transport Study" was published by researchers at National Yang Ming Chiao Tung University. Abstract "Reducing the contact resistance is one of the major challenges in developing transistors based on two-dimensional materials. In this study, we perform first-principles ... » read more

2D Semiconductor Materials Creep Toward Manufacturing

By Katherine Derbyshire - 16 Feb, 2023 - Comments: 0

As transistors scale down, they need thinner channels to achieve adequate channel control. In silicon, though, surface roughness scattering degrades mobility, limiting the ultimate channel thickness to about 3nm. Two-dimensional transition metal dichalcogenides (TMDs), such as MoS2 and WSe2, are attractive in part because they avoid this limitation. With no out-of-plane dangling bonds and at... » read more

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