Investigating Subthreshold Current Suppression in ReS2 Nanosheet-Based FETs

A technical paper titled “Subthreshold Current Suppression in ReS2 Nanosheet-Based Field-Effect Transistors at High Temperatures” was published by researchers at University of Salerno, Università degli studi del Sannio, and University of Exeter. Abstract: "Two-dimensional rhenium disulfide (ReS2), a member of the transition-metal dichalcogenide family, has received significant attention... » read more

A New Layered Structure With 2D Material That Exhibits A Unique Transfer Of Energy And Charge

A technical paper titled “Excitation-Dependent High-Lying Excitonic Exchange via Interlayer Energy Transfer from Lower-to-Higher Bandgap 2D Material” was published by researchers at University of Warsaw, Brookhaven National Laboratory, and National Institute for Materials Science (Japan). Abstract: "High light absorption (∼15%) and strong photoluminescence (PL) emission in monolayer (1L... » read more

How Band Nesting Can Achieve Near-Perfect Optical Absorption In Just Two Layers Of TMD Materials

A technical paper titled “Achieving near-perfect light absorption in atomically thin transition metal dichalcogenides through band nesting” was published by researchers at University of Minnesota, University of Notre Dame, and Korea Advanced Institute of Science and Technology (KAIST). Abstract: "Near-perfect light absorbers (NPLAs), with absorbance, λ, of at least 99%, have a wide ... » read more

Antenna For Nanoscale Light Source By Placing The TMD Outside The Tunnelling Pathway

A technical paper titled "Exciton-assisted electron tunnelling in van der Waals heterostructures" was published by researchers at ETH Zürich, The Barcelona Institute of Science and Technology, Swiss Federal Laboratories for Materials Science and Technology, National Institute for Materials Science, University of Basel, and Institució Catalana de Recerca i Estudis Avançats (ICREA). Abstract:... » read more

Research Bits: May 10

Growing 2D TMDs on chips Researchers from Massachusetts Institute of Technology (MIT), Oak Ridge National Laboratory, and Ericsson Research found a way to “grow” layers of 2D transition metal dichalcogenide (TMD) materials directly on top of a fully fabricated silicon chip, a technique they say could enable denser integrations. The researchers focused on molybdenum disulfide, which is f... » read more

Reducing Contact Resistance in Developing Transistors Based On 2D Materials

A new technical paper titled "WS2 Transistors with Sulfur Atoms Being Replaced at the Interface: First-Principles Quantum-Transport Study" was published by researchers at National Yang Ming Chiao Tung University. Abstract "Reducing the contact resistance is one of the major challenges in developing transistors based on two-dimensional materials. In this study, we perform first-principles ... » read more

2D Semiconductor Materials Creep Toward Manufacturing

As transistors scale down, they need thinner channels to achieve adequate channel control. In silicon, though, surface roughness scattering degrades mobility, limiting the ultimate channel thickness to about 3nm. Two-dimensional transition metal dichalcogenides (TMDs), such as MoS2 and WSe2, are attractive in part because they avoid this limitation. With no out-of-plane dangling bonds and at... » read more

New Materials Open Door To New Devices

Integrating 2D materials into conventional semiconductor manufacturing processes may be one of the more radical changes in the chip industry’s history. While there is pain and suffering associated with the introduction of any new materials in semiconductor manufacturing, transition metal dichalcogenides (TMDs) support a variety of new device concepts, including BEOL transistors and single-... » read more

Week In Review: Manufacturing, Test

Node scaling wars are revving up, although much of the action is happening where most people can't see it — inside of research labs. This is difficult stuff, which makes delivery dates difficult to pinpoint, and no one wants to give away their competitive position or commit to a timeline they can't keep. Billions of dollars of leading-edge research — funded by pure-play foundry TSMC, IDM... » read more

Interfacial ferroelectricity in marginally twisted 2D semiconductors

Abstract "Twisted heterostructures of two-dimensional crystals offer almost unlimited scope for the design of new metamaterials. Here we demonstrate a room temperature ferroelectric semiconductor that is assembled using mono- or few-layer MoS2. These van der Waals heterostructures feature broken inversion symmetry, which, together with the asymmetry of atomic arrangement at the interface of tw... » read more

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