Scaling Nanoribbon Transistors with Monolayer TMDs (Stanford, Chalmers, Horiba, SLAC)


Researchers from Stanford University, Chalmers University of Technology, HORIBA Scientific, and SLAC National Accelerator Laboratory have published “Scaling nanoribbon transistors with monolayer transition metal dichalcogenides”. Abstract “Nanoscale transistors demand aggressive scaling of all channel dimensions—length, width and thickness. Two-dimensional semiconductors (2DS... » read more

2D Semiconductors Inch Forward


Key Takeaways: Diffusing oxygen into 2D materials can improve adhesion properties. Channel-last processes can preserve most of the traditional gate-all-around process flow. Dual-gate MoS2 FETs with graphene contacts take advantage of layer transfer methods. Transition metal dichalcogenides (TMDs) have come a long way since exfoliated flakes were the state of the art, but the... » read more

Minimizing Optical Loss While Enabling Efficient Phase Modulation in TMD-Based Devices (Nanyang Technological Univ., et al.)


A new technical paper titled "Hybrid tungsten oxyselenide/graphene electrodes for near-lossless 2D semiconductor phase modulators" was published by researchers at Nanyang Technological University, CNRS-International-NTU-Thales Research Alliance (CINTRA), University of Chicago, University of Wisconsin-Madison, Chungnam National University, National Institute for Materials Science, MIT, and Singa... » read more

Simulating Atomic Layer Processing Of 2D Materials


Integrating 2D materials into sustainable electronic devices presents key challenges, particularly in depositing or etching nanometer-thick layers on high aspect ratio structures. Atomic Layer Etching (ALE) offers atomic-level precision and has demonstrated success in producing atomically thin layers of transition metal dichalcogenides (TMDs) like MoS2. Synopsys has developed an industry-grade ... » read more

The Race To Replace Silicon


For over 75 years, silicon has been the dominant material in the evolution of modern electronics, powering everything from smartphones to satellites. But as chipmakers push toward smaller nodes, higher power efficiency, and quantum-scale precision, a pressing question is echoing across fabs and R&D labs worldwide: Is it time to move beyond silicon? In this blog post, we explore the growi... » read more

TSMC Tech Symposium 2025


TSMC held its North America Technology Symposium on Wednesday, April 23, 2025 at the Santa Clara Convention Center and presented update information on its relentless march to ever finer geometries and higher levels of scaling. Figure 1, below, shows TSMC’s latest advanced technology roadmap. Compared to the roadmap presented at last year’s tech symposium, the new roadmap shows the “Hig... » read more

2D Materials Roadmap: Current And Future Challenges, Solutions


A new technical paper titled "The 2D Materials Roadmap" was published by researchers at many institutions including Chinese Academy of Sciences, TU Denmark, Pennsylvania State University, University of Manchester, University of Cambridge et al. Abstract "Over the past two decades, 2D materials have rapidly evolved into a diverse and expanding family of material platforms. Many members of th... » read more

Research Bits: Mar. 10


Incipient ferroelectricity Researchers from Penn State University and the University of Minnesota propose harnessing incipient ferroelectricity in multifunctional two-dimensional FETs to create neuromorphic computer memory. Materials with incipient ferroelectricity have no stable ferroelectric order at room temperature and need certain conditions to achieve an electrical charge. The FETs were ... » read more

Ultranarrow Semiconductor WS2 Nanoribbon FETs (Chalmers)


A new technical paper titled "Ultranarrow Semiconductor WS2 Nanoribbon Field-Effect Transistors" was published by researchers at Chalmers University of Technology. Abstract "Semiconducting transition metal dichalcogenides (TMDs) have attracted significant attention for their potential to develop high-performance, energy-efficient, and nanoscale electronic devices. Despite notable advancem... » read more

Electronic and Transport Properties of Six TMD Heterostructures


A new technical paper titled "Computational Assessment of I–V Curves and Tunability of 2D Semiconductor van der Waals Heterostructures" was published by researchers at Chalmers University of Technology. Abstract "Two-dimensional (2D) transition metal dichalcogenides (TMDs) have received significant interest for use in tunnel field-effect transistors (TFETs) due to their ultrathin layers... » read more

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