Electrically Controlled All-AFM Tunnel Junctions on Silicon with Large Room-Temperature Magnetoresistance (Northwestern)


A new technical paper titled "Electrically Controlled All-Antiferromagnetic Tunnel Junctions on Silicon with Large Room-Temperature Magnetoresistance" was published by researchers at Northwestern University, Universitat Jaume, California State University Northridge, Argonne National Lab, Politecnico diBari, and University of Messina. Abstract "Antiferromagnetic (AFM) materials are a pathway... » read more

Targeting Redundancy In ICs


Technology developed for one purpose is often applicable to other areas, but organizational silos can get in the way of capitalizing on it until there is a clear cost advantage. Consider memory. All memories are fabricated with spare rows and columns that are swapped in when a device fails manufacturing test. "This is a common method to increase the yield of a device, based on how much memor... » read more