A technical paper titled "Perspectives on MOVPE-grown (100) β-Ga2O3 thin films and its Al-alloy for power electronics application" was published by researchers at Leibniz-Institut für Kristallzüchtung (IKZ), Germany.
"Beta gallium oxide (β-Ga2O3) is a promising ultra-wide bandgap semiconductor with attractive physical properties for next-generation high-power devices, radio frequency ele...
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