Research Bits: June 9


InGaOx GAA transistor Researchers from the University of Tokyo created a gate-all-around transistor made from gallium-doped indium oxide (InGaOx). Doping indium oxide with gallium suppressed oxygen vacancies, improving transistor reliability. "We wanted our crystalline oxide transistor to feature a 'gate-all-around' structure, whereby the gate, which turns the current on or off, surrounds t... » read more

System Bits: May 21


Washable, wearable energy devices for clothing Researchers at the University of Cambridge collaborated with colleagues at China’s Jiangnan University to develop wearable electronic components that could be woven into fabrics for clothing, suitable for energy conversion, flexible circuits, health-care monitoring, and other applications. Graphene and other materials can be directly incorpor... » read more

Manufacturing Bits: Nov. 13


Quantum memories The University of Alberta has developed a new method for making quantum memories, paving the way for a next-generation quantum Internet. Quantum memory is targeted for quantum networks and computers. In classical computing, the information is stored in bits, which can be either a “0” or “1”. In quantum computing, information is stored in quantum bits, or qubits, whi... » read more