New Class Of Materials With Increased Band Gap (U. of Minnesota, Caltech)


A new technical paper titled "Deep-ultraviolet transparent conducting SrSnO3 via heterostructure design" was published by researchers at University of Minnesota–Twin Cities and Caltech. The researchers "looked at creating a new class of materials with increased “band gap,” enhancing both transparency and conductivity. The new material is a transparent conducting oxide, created with a s... » read more

Summary Of The Progress In Beta-Phase Gallium Oxide Field-Effect Transistors


A technical paper titled “Progress in Gallium Oxide Field-Effect Transistors for High-Power and RF Applications” was published by researchers at George Mason University and National Institute of Standards and Technology (NIST). Abstract: "Power electronics are becoming increasingly more important, as electrical energy constitutes 40% of the total primary energy usage in the USA and is exp... » read more

Power Semiconductor Devices: Thermal Management and Packaging


A technical paper titled "Thermal management and packaging of wide and ultra-wide bandgap power devices: a review and perspective" was published by researchers at Virginia Polytechnic Institute and State University, U.S. Naval Research Laboratory, and Univ Lyon, CNRS. "This paper provides a timely review of the thermal management of WBG and UWBG power devices with an emphasis on packaged dev... » read more

Excess noise in high-current diamond diodes


Abstract "We report the results of an investigation of low-frequency excess noise in high-current diamond diodes. It was found that the electronic excess noise of the diamond diodes is dominated by the 1/f and generation-recombination noise, which reveals itself as Lorentzian spectral features (f is the frequency). The generation-recombination bulges are characteristic of diamond diodes with l... » read more