Researchers from ETH Zurich present a new technical paper titled "Understanding RowHammer Under Reduced Wordline Voltage: An Experimental Study Using Real DRAM Devices."
Abstract (Partial)
"This is the first work to experimentally demonstrate on 272 real DRAM chips that lowering VPP reduces a DRAM chip's RowHammer vulnerability. We show that lowering VPP 1) increases the number of activat...
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