Reduce RowHammer Vulnerability By Reducing Wordline Voltage

Researchers from ETH Zurich present a new technical paper titled "Understanding RowHammer Under Reduced Wordline Voltage: An Experimental Study Using Real DRAM Devices." Abstract (Partial) "This is the first work to experimentally demonstrate on 272 real DRAM chips that lowering VPP reduces a DRAM chip's RowHammer vulnerability. We show that lowering VPP 1) increases the number of activat... » read more