A New Layered Structure With 2D Material That Exhibits A Unique Transfer Of Energy And Charge

A technical paper titled “Excitation-Dependent High-Lying Excitonic Exchange via Interlayer Energy Transfer from Lower-to-Higher Bandgap 2D Material” was published by researchers at University of Warsaw, Brookhaven National Laboratory, and National Institute for Materials Science (Japan). Abstract: "High light absorption (∼15%) and strong photoluminescence (PL) emission in monolayer (1L... » read more

Demonstrating A Fully-2D-Material Based Device For Temperature Sensing In Cryogenic Regimes

A technical paper titled “I-V-T Characteristics and Temperature Sensor Performance of a Fully-2D WSe2/MoS2 Heterojunction Diode at Cryogenic Temperatures” was published by researchers at Technische Universität Dresden, Institute of Ion Beam Physics and Materials Research, and National Institute for Materials Science. Abstract: "In this work, we demonstrate the usability of a fully-2D-mat... » read more

2D Semiconductor Materials Creep Toward Manufacturing

As transistors scale down, they need thinner channels to achieve adequate channel control. In silicon, though, surface roughness scattering degrades mobility, limiting the ultimate channel thickness to about 3nm. Two-dimensional transition metal dichalcogenides (TMDs), such as MoS2 and WSe2, are attractive in part because they avoid this limitation. With no out-of-plane dangling bonds and at... » read more