Metrology Challenges For Gate-All-Around


Metrology is proving to be a major challenge for those foundries working on processes for gate-all-around FETs at 3nm and beyond. Metrology is the art of measuring and characterizing structures in devices. Measuring and characterizing structures in devices has become more difficult and expensive at each new node, and the introduction of new types of transistors is making this even harder. Ev... » read more

FinFET Metrology Challenges Grow


Chipmakers face a multitude of challenges in the fab at 10nm/7nm and beyond, but one technology that is typically under the radar is becoming especially difficult—metrology. Metrology, the art of measuring and characterizing structures, is used to pinpoint problems in devices and processes. It helps to ensure yields in both the lab and fab. At 28nm and above, metrology is a straightforward... » read more

Measuring FinFETs Will Get Harder


The industry is gradually migrating toward chips based on finFET transistors at 16nm/14nm and beyond, but manufacturing those finFETs is proving to be a daunting challenge in the fab. Patterning is the most difficult process for finFETs. But another process, metrology, is fast becoming one of the biggest challenges for the next-generation transistor technology. In fact, [getkc id="252" kc_n... » read more

Searching For 3D Metrology


In the previous decade, chipmakers made a bold but necessary decision to select the [getkc id="185" kc_name="finFET"] as the next transistor architecture for the IC industry. Over time, though, chipmakers discovered that the finFET would present some challenges in the fab. Deposition, etch and lithography were the obvious hurdles, but chipmakers also saw a big gap in metrology. In fact,... » read more