3D Structuring Inside GaAs by Ultrafast Laser Inscription


A new technical paper titled “Burst mode enabled ultrafast laser inscription inside gallium arsenide” was published by researchers at LP3 Laboratory in France, a joint research unit of Aix-Marseille University (AMU) and CNRS.

“We investigate the possibility of using THzrepetition-rate burst mode for ULI inside GaAs, a material that cannot be internally processed with single femtosecond pulses. With the assistance of luminescence microscopy, we investigate the sensitivity of energy deposition to the characteristics of the applied pulses,” states the paper.

Find the open access technical paper here. Published September 2022.

Citation: Andong Wang et al 2022 Int. J. Extrem. Manuf. 4 045001.

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