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SOT-MRAM To Challenge SRAM


In an era of new non-volatile memory (NVM) technologies, yet another variation is poised to join the competition — a new version of MRAM called spin-orbit torque, or SOT-MRAM. What makes this one particularly interesting is the possibility that someday it could supplant SRAM arrays in systems-on-chip (SoCs) and other integrated circuits. The key advantages of SOT-MRAM technology are the pr... » read more

Intermittent Undefined State Fault in RRAMs


Abstract: " Industry is prototyping and commercializing Resistive Random Access Memories (RRAMs). Unfortunately, RRAM devices introduce new defects and faults. Hence, high-quality test solutions are urgently needed. Based on silicon measurements, this paper identifies a new RRAM unique fault, the Intermittent Undefined State Fault (IUSF); this fault causes the RRAM device to intermittently c... » read more

Power/Performance Bits: Oct. 24


Molecular storage Chemists at the Institut Charles Sadron and Aix-Marseille University used mass spectrometry to read several bytes of data recorded on the molecular scale with synthetic polymers, setting a new benchmark for the amount of data stored as a sequence of molecular units (monomers) that can be read. Polymers have great potential since, to record a bit, their component monomers r... » read more