Chip Industry’s Technical Paper Roundup: Nov. 29

Carbon nanotube transistors; XDA Of flip-chip packaged finFET devices; analog low-dropout voltage regulators; variations in silicon photonic circuits; EV charging cybersecurity; how 2D materials expand; vdW material properties; nanoscale 3D printing; 3D structuring inside GaAs by ULI.

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New technical papers added to Semiconductor Engineering’s library this week.

Technical Paper Research Organizations
Carbon nanotube transistors: Making electronics from molecules Duke University, Northwestern University, and Stanford University
X-Ray Device Alteration Using a Scanning X-Ray Microscope NVIDIA and Sigray
Evaluation and Perspective of Analog Low-Dropout Voltage Regulators: A Review Universiti Tunku Abdul Rahman, University of Malaya, Asia Pacific University of Technology and Innovation, and University of Macau
Capturing the Effects of Spatial Process Variations in Silicon Photonic Circuits Photonics Research Group, Ghent University−IMEC
Review of Electric Vehicle Charger Cybersecurity Vulnerabilities, Potential Impacts, and Defenses Sandia National Laboratories
A unified approach and descriptor for the thermal expansion of two-dimensional transition metal dichalcogenide monolayers MIT and Southern University of Science and Technology
Mechanical nanolattices printed using nanocluster-based photoresists Stanford University and Northwestern University
Elemental excitations in MoI3 one-dimensional van der Waals nanowires NIST, UC Riverside, University of Georgia, Theiss Research Inc, and Stanford University
Burst mode enabled ultrafast laser inscription inside gallium arsenide LP3 Laboratory in France, a joint research unit of Aix-Marseille University (AMU) and CNRS

 

Related Reading:
Chip Industry’s Technical Paper Roundup: Nov. 21
New papers: lithography modeling; solving Rowhammer; energy-efficient batch normalization HW; 3-to-1 reconfigurable analog signal modulation circuit; lateral double magnetic tunnel junction; reduce branch mispredictions in data centers; stabilizing hafnium oxide-based thin film; approximate adders for in-memory computing.
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