3D Structuring Inside GaAs by Ultrafast Laser Inscription

A new technical paper titled "Burst mode enabled ultrafast laser inscription inside gallium arsenide" was published by researchers at LP3 Laboratory in France, a joint research unit of Aix-Marseille University (AMU) and CNRS. "We investigate the possibility of using THzrepetition-rate burst mode for ULI inside GaAs, a material that cannot be internally processed with single femtosecond pulse... » read more