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A Novel PUF Using Stochastic Short-Term Memory Time of Oxide-Based RRAM for Embedded Applications

Novel PUF utilizing the stochastic short-term memory time of oxide-based RRAM.

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Abstract:
“RRAM suffers from poor retention with short-term memory time when using low compliance current for programing. However, the short-term memory time exhibits ideal randomness, which can be exploited as an entropy source for physically unclonable function (PUF). In this work, we demonstrated a novel PUF utilizing the stochastic short-term memory time of oxide-based RRAM. The proposed PUF was implemented on a 256Kb HfO 2 /WO x bilayer RRAM test chip in 0.13μm logic process. The RRAM PUF is capable of regenerating >10 20 times after 10 years@115°C and the bit error rate (BER) remains <; 0.08% at the temperature of up to 115°C for the read voltage of 0.1-0.7V, exhibiting strong resiliency against environmental variations. The average inter-chip Hamming distance (HD) is 0.4999 and the average intra-chip HD is 0.0009. The energy efficiency is 0.19 pJ/bit.”

 

Find the technical paper link here (IEEE Xplore) or here on Research Gate to request full-text PDF from authors.

J. Yang et al., “A Novel PUF Using Stochastic Short-Term Memory Time of Oxide-Based RRAM for Embedded Applications,” 2020 IEEE International Electron Devices Meeting (IEDM), 2020, pp. 39.2.1-39.2.4, doi: 10.1109/IEDM13553.2020.9372050.



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