2D Semiconductors Inch Forward


Key Takeaways: Diffusing oxygen into 2D materials can improve adhesion properties. Channel-last processes can preserve most of the traditional gate-all-around process flow. Dual-gate MoS2 FETs with graphene contacts take advantage of layer transfer methods. Transition metal dichalcogenides (TMDs) have come a long way since exfoliated flakes were the state of the art, but the... » read more

Research Bits: Feb. 9


Computing with heat Researchers from the Massachusetts Institute of Technology (MIT) designed silicon structures that can perform calculations in an electronic device using excess heat instead of electricity. The device was created using a software system that automatically designs a material that can conduct heat in a specific manner. The inverse design technique allowed the researchers to... » read more

Research Bits: Oct. 21


Direct patterning with UV cross-linking Researchers from Ulsan National Institute of Science and Technology (UNIST), Yonsei University, Sungkyunkwan University, University of Chemistry and Technology Prague, and Sogang University developed a technique that enables the direct patterning of 2D semiconductor materials onto substrates without the use of toxic solvents. The process involves disp... » read more

Chip Industry Week In Review


Global chips sales hit a record $56.9 billion in October, a 22% increase versus October 2023, according to the Semiconductor Industry Association. Also, global semiconductor equipment billings reached $30.38 billion in Q3 2024, a 19% YoY increase and 13% growth QoQ, SEMI reported. TSMC commenced equipment installation for its 2nm fab in Kaohsiung, Taiwan, six months ahead of schedule. The 2n... » read more

Preparing For Ferroelectric Devices


The discovery of ferroelectricity in materials that are compatible with integrated circuit manufacturing has sparked a wave of interest in ferroelectric devices. Ferroelectrics are materials with a permanent polarization, the direction of which can be switched by an applied field. This polarization can be used to raise or lower the threshold voltage of a transistor, as in FeFETs, or it can c... » read more

Chip Industry Week In Review


Global spending on 300mm fab equipment is expected to reach a record US$400 billion from 2025 to 2027, according to SEMI. Key drivers are the regionalization of semiconductor fabs and the increasing demand for AI chips in data centers and edge devices, with China, South Korea, and Taiwan leading the way. The Biden-Harris Administration launched the National Semiconductor Technology Center’... » read more

Technical Paper Round-Up: July 5


New technical papers added to Semiconductor Engineering’s library this week. [table id=36 /] Semiconductor Engineering is in the process of building this library of research papers. Please send suggestions (via comments section below) for what else you’d like us to incorporate. If you have research papers you are trying to promote, we will review them to see if they are a good fit for... » read more

One Transistor Process-in-Memory Device Strategy w/ Multi-Functional Multi-Gate One-transistor (MGT) Design of Multiple Electrodes


New technical paper titled "Multi-functional multi-gate one-transistor process-in-memory electronics with foundry processing and footprint reduction" from researchers at Ningbo Institute of Materials Technology and Engineering (Chinese Academy of Sciences), Center of Materials Science and Optoelectronics Engineering (University of Chinese Academy of Sciences), Shanghai Institute of Microsystem ... » read more

Making PUFs Even More Secure


As security has become a must-have in most systems, hardware roots of trust (HRoTs) have started appearing in many chips. Critical to an HRoT is the ability to authenticate and to create keys – ideally from a reliable source that is unviewable and immutable. “We see hardware roots of trust deployed in two use models — providing a foundation to securely start a system, and enabling a se... » read more

Thinner Channels With 2D Semiconductors


Moving to future nodes will require more than just smaller features. At 3/2nm and beyond, new materials are likely to be added, but which ones and exactly when will depend upon an explosion of material science research underway at universities and companies around the globe. With field-effect transistors, a voltage applied to the gate creates an electric field in the channel, bending the ban... » read more

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