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One Transistor Process-in-Memory Device Strategy w/ Multi-Functional Multi-Gate One-transistor (MGT) Design of Multiple Electrodes

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New technical paper titled “Multi-functional multi-gate one-transistor process-in-memory electronics with foundry processing and footprint reduction” from researchers at Ningbo Institute of Materials Technology and Engineering (Chinese Academy of Sciences), Center of Materials Science and Optoelectronics Engineering (University of Chinese Academy of Sciences), Shanghai Institute of Microsystem and Information Technology (Chinese Academy of Sciences), UNSW Australia and Fudan University.

Abstract:

“Logic gates are fundamental components of integrated circuits, and integration strategies involving multiple logic gates and advanced materials have been developed to meet the development requirements of high-density integrated circuits. However, these strategies are still far from being widely applicable owing to their incompatibility with the modern silicon-based foundry lines. Here, we propose a silicon-foundry-line-based multi-gate one-transistor design to simplify the conventional multi-transistor logic gates into one-transistor gates, thus reducing the circuit footprint by at least 40%. More importantly, the proposed configuration could simultaneously provide the multi-functionalities of logic gates, memory, and artificial synapses. In particular, our design could mimic the artificial synapses in three dimensions while simultaneously being implemented by standard silicon-on-insulator process technology. The foundry-line-compatible one-transistor design has great potential for immediate and widespread applications in next-generation multifunctional electronics.”

Find the open access technical paper here. Published June 2022.

Dai, M., Song, Z., Lin, CH. et al. Multi-functional multi-gate one-transistor process-in-memory electronics with foundry processing and footprint reduction. Commun Mater 3, 41 (2022). https://doi.org/10.1038/s43246-022-00261-3.

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