A technical paper titled “Recent progress in spin-orbit torque magnetic random-access memory” was recently published by imec.
Abstract
“Spin-orbit torque magnetic random-access memory (SOT-MRAM) offers promise for fast operation and high endurance but faces challenges such as low switching current, reliable field free switching, and back-end of line manufacturing processes. We review recent advancements in perpendicular SOT-MRAM devices, emphasizing on material developments to enhance charge-spin conversion efficiency and large-scale device integration strategies. We also discuss the remaining challenges in achieving a single device with low switching current, reliable field free switching to unlock the full potential of SOT-MRAM technology.”
Find the technical paper here. Published October 2024.
Nguyen, V.D., Rao, S., Wostyn, K. et al. Recent progress in spin-orbit torque magnetic random-access memory. npj Spintronics 2, 48 (2024). https://doi.org/10.1038/s44306-024-00044-1
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