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SOT-MRAM-based CIM architecture for a CNN model


New research paper "In-Memory Computing Architecture for a Convolutional Neural Network Based on Spin Orbit Torque MRAM", from National Taiwan University, Feng Chia University, Chung Yuan Christian University. Abstract "Recently, numerous studies have investigated computing in-memory (CIM) architectures for neural networks to overcome memory bottlenecks. Because of its low delay, high energ... » read more

SOT-MRAM To Challenge SRAM


In an era of new non-volatile memory (NVM) technologies, yet another variation is poised to join the competition — a new version of MRAM called spin-orbit torque, or SOT-MRAM. What makes this one particularly interesting is the possibility that someday it could supplant SRAM arrays in systems-on-chip (SoCs) and other integrated circuits. The key advantages of SOT-MRAM technology are the pr... » read more

MRAM Evolves In Multiple Directions


Magnetoresistive RAM (MRAM) is one of several new non-volatile memory technologies targeting broad commercial availability, but designing MRAM into chips and systems isn't as simple as adding other types of memory. MRAM isn’t an all-things-for-all-applications technology. It needs to be tuned for its intended purpose. MRAMs targeting flash will not do as well targeting SRAMs, and vice vers... » read more

Shared-Write-Channel-Based Device for High-Density Spin-Orbit-Torque Magnetic Random-Access Memory


ABSTRACT "Spin-orbit-torque (SOT) devices are promising candidates for the future magnetic memory landscape, as they promise high endurance, low read disturbance, and low read error, in comparison with spin-transfer torque devices. However, SOT memories are area intensive due to the requirement for two access transistors per bit. Here, we report a multibit SOT cell that has a single write chan... » read more

Startup Funding: December 2020


AI hardware startups were hot in our December startup-funding focus, with two companies landing rounds exceeding $100M and plenty of others seeing investment. Two Chinese EDA companies received funding in a bid to boost the country's semiconductor ecosystem. One company providing control systems for fabs achieved $8M in Series A, and both autonomous driving and electric vehicles pulled in lots ... » read more

Manufacturing Bits: July 21


Intel’s next-gen MRAM At the recent 2020 Symposia on VLSI Technology and Circuits, Intel presented a paper on a CMOS-compatible spin-orbit torque MRAM (SOT-MRAM) device. Still in R&D, SOT-MRAM is a next-generation MRAM designed to replace SRAM. Generally, processors integrate a CPU, SRAM and a variety of other functions. SRAM stores instructions that are rapidly needed by the processo... » read more

Neuromorphic Computing Drives The Landscape Of Emerging Memories For Artificial Intelligence SoCs


The pace of deep machine learning and artificial intelligence (AI) is changing the world of computing at all levels of hardware architecture, software, chip manufacturing, and system packaging. Two major developments have opened the doors to implementing new techniques in machine learning. First, vast amounts of data, i.e., “Big Data,” are available for systems to process. Second, advanced ... » read more

NVM Reliability Challenges And Tradeoffs


This second of two parts looks at different memories and possible solutions. Part one can be found here. While various NVM technologies, such as PCRAM, MRAM, ReRAM and NRAM share similar high-level traits, their physical renderings are quite different. That provides each with its own set of challenges and solutions. PCRAM has had a fraught history. Initially released by Samsung, Micron, a... » read more

Memory Issues For AI Edge Chips


Several companies are developing or ramping up AI chips for systems on the network edge, but vendors face a variety of challenges around process nodes and memory choices that can vary greatly from one application to the next. The network edge involves a class of products ranging from cars and drones to security cameras, smart speakers and even enterprise servers. All of these applications in... » read more

Manufacturing Bits: Dec. 16


Imec-Leti alliance At the recent IEEE International Electron Devices Meeting (IEDM), Imec and Leti announced plans to collaborate in select areas. The two R&D organizations plan to collaborate in two areas—artificial intelligence (AI) and quantum computing. Imec and Leti have been separately working on AI technologies based on various next-generation memory architectures. Both entitie... » read more

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