tag: SOT-MRAM

Physical Modeling and Benchmarking for 2T-SOT-MRAM (Georgia Tech, MIT, Cornell)
By Technical Paper Link - 22 Dec, 2025 - Comments: 0

A new technical paper titled "Modeling and Optimization of Two-Terminal Spin-Orbit-Torque MRAM" was published by researchers at Georgia Institute of Technology, MIT, and Cornell University. Abstract "This paper presents physical modeling and benchmarking for two-terminal spin-orbit torque magnetic random-access memory (2T-SOT-MRAM). The results indicate that the common SOT materials that ... » read more

SOT-Based MRAM Design At 7nm (Georgia Tech, Intel)
By Technical Paper Link - 31 Oct, 2025 - Comments: 0

A new technical paper titled "Comprehensive device to system co-design for SOT-MRAM at the 7nm node" was published by researchers at Georgia Institute of Technology and Intel. Abstract "This work presents a comprehensive spin-orbit torque (SOT) based random access memory (MRAM) design at the 7nm technology node, spanning from device-level characteristics to system-level power performance ar... » read more

Cross-Node Scaling Potential of SOT-MRAM for Last-Level Caches (imec)
By Technical Paper Link - 02 Sep, 2025 - Comments: 0

A new technical paper titled "SOT-MRAM Bitcell Scaling with BEOL Read Selectors: A DTCO Study" was published by researchers at imec, Leuven, and 3001 Belgium. Abstract "This work explores the cross-node scaling potential of SOT-MRAM for last-level caches (LLCs) under heterogeneous system scaling paradigm. We perform extensive Design-Technology Co-Optimization (DTCO) exercises to evaluate th... » read more

A Route For More Efficient SOT-MRAM Designs (NTU, TSMC)
By Technical Paper Link - 06 May, 2025 - Comments: 0

A new technical paper titled "Efficient Magnetization Switching via Orbital-to-Spin Conversion in Cr/W-Based Heterostructures" by researchers at National Taiwan University and TSMC. Abstract "A highly efficient spin–orbit torque (SOT) switching mechanism is crucial for the realization of practical SOT magnetic random-access memory (MRAM). This study proposes a Cr/W-based spin current sour... » read more

Advancements in SOT-MRAM Device Development (imec)
By Technical Paper Link - 28 Dec, 2024 - Comments: 0

A technical paper titled "Recent progress in spin-orbit torque magnetic random-access memory" was recently published by imec. Abstract "Spin-orbit torque magnetic random-access memory (SOT-MRAM) offers promise for fast operation and high endurance but faces challenges such as low switching current, reliable field free switching, and back-end of line manufacturing processes. We review rece... » read more

Impact of Scaling and BEOL Technology Solutions At The 7nm Node On MRAM
By Technical Paper Link - 20 Feb, 2024 - Comments: 0

A technical paper titled “Impact of Technology Scaling and Back-End-of-the-Line Technology Solutions on Magnetic Random-Access Memories” was published by researchers at Georgia Institute of Technology. Abstract: "While magnetic random-access memories (MRAMs) are promising because of their nonvolatility, relatively fast speeds, and high endurance, there are major challenges in adopting the... » read more

Overview Of Spin-Orbit Torque Vs. Spin-Transfer Torque For MRAM Devices 
By Technical Paper Link - 30 Jan, 2024 - Comments: 0

A technical paper titled “Perspectives on field-free spin-orbit torque devices for memory and computing applications” was published by researchers at Northwestern University. Abstract: "The emergence of embedded magnetic random-access memory (MRAM) and its integration in mainstream semiconductor manufacturing technology have created an unprecedented opportunity for engineering computing s... » read more

High Performance Memory: Novel Lateral Double Magnetic Tunnel Junction (MTJ) With An Orthogonal Polarizer
By Technical Paper Link - 17 Nov, 2022 - Comments: 0

A new technical paper titled "Lateral double magnetic tunnel junction device with orthogonal polarizer for high-performance magnetoresistive memory" was published by researchers at Hanyang University. Find the technical paper here. Published November 2022. Sin, S., Oh, S. Lateral double magnetic tunnel junction device with orthogonal polarizer for high-performance magnetoresistive memory.... » read more

SOT-MRAM-based CIM architecture for a CNN model
By Technical Paper Link - 09 May, 2022 - Comments: 0

New research paper "In-Memory Computing Architecture for a Convolutional Neural Network Based on Spin Orbit Torque MRAM", from National Taiwan University, Feng Chia University, Chung Yuan Christian University. Abstract "Recently, numerous studies have investigated computing in-memory (CIM) architectures for neural networks to overcome memory bottlenecks. Because of its low delay, high energ... » read more

SOT-MRAM To Challenge SRAM
By Bryon Moyer - 13 Jan, 2022 - Comments: 1

In an era of new non-volatile memory (NVM) technologies, yet another variation is poised to join the competition — a new version of MRAM called spin-orbit torque, or SOT-MRAM. What makes this one particularly interesting is the possibility that someday it could supplant SRAM arrays in systems-on-chip (SoCs) and other integrated circuits. The key advantages of SOT-MRAM technology are the pr... » read more

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